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Content Provider | IEEE Xplore Digital Library |
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Author | Chen, P.S. Dae-Hyun Kim Bergman, J. Hacker, J. Brar, B. |
Copyright Year | 2011 |
Description | Author affiliation: Teledyne Scientific & Imaging, LLC, Thousand Oaks, CA 91360, USA (Chen, P.S.; Dae-Hyun Kim; Bergman, J.; Hacker, J.; Brar, B.) |
Abstract | This paper presents a 2-stage Low-Noise-Amplifier (LNA) MMIC which provides ultra-low-noise, broad bandwidth, and high associated gain while consuming a fairly low DC power dissipation of 20 mW. The amplifier has been fabricated using L = 50 nm enhancement-mode (E-mode) InAs pHEMTs on a 4-mil InP substrate. By using broad bandwidth RF chokes, the LNA exhibits an average noise figure (NF) of 1.1 dB from 4 to 24 GHz with a minimum associated gain (G) of 17 dB. To the knowledge of the authors, this is the first demonstration of an LNA that covers from C-band to K-band with NF < 1.1 dB. This is allowed for by combining the extremely low NF characteristics of an advanced InGaAs pHEMT with broadband RF chokes. |
Starting Page | 1 |
Ending Page | 5 |
File Size | 1016702 |
Page Count | 5 |
File Format | |
ISBN | 9781612847542 |
ISSN | 0149645X |
e-ISBN | 9781612847573 |
e-ISBN | 9781612847566 |
DOI | 10.1109/MWSYM.2011.5972958 |
Language | English |
Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
Publisher Date | 2011-06-05 |
Publisher Place | USA |
Access Restriction | Subscribed |
Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
Subject Keyword | Indexes HEMTs Radio frequency bandwidth and RF choke Low noise amplifier InGaAs HEMT associated gain noise figure |
Content Type | Text |
Resource Type | Article |
Subject | Condensed Matter Physics Electrical and Electronic Engineering Radiation |
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