NDLI: 1.6–2.1 GHz broadband Doherty power amplifiers for LTE handset applications

Content Provider	IEEE Xplore Digital Library
Author	Daehyun Kang Dongsu Kim Yunsung Cho Jooseung Kim Byungjoon Park Chenxi Zhao Bumman Kim
Copyright Year	2011
Description	Author affiliation: Department of Electrical Engineering, Pohang University of Science and Technology, San 31, Hyoid-dong, Nab-gu, Gemsbuck, 790-784, Republic of Korea (Daehyun Kang; Dongsu Kim; Yunsung Cho; Jooseung Kim; Byungjoon Park; Chenxi Zhao; Bumman Kim)
Abstract	A Doherty power amplifier (PA) for long term evolution (LTE) applications is fully integrated on a 1.4×1.4 $mm^{2}$ die using a 2-µm InGaP/GaAs hetero-junction bipolar transistor (HBT) process. The quarter-wavelength transformer is the bandwidth (BW) limit of the Doherty PA. Other bandwidth limiting factors are analyzed and eliminated. A conventional phase compensation circuit and an additional offset line are merged into the input network of the Doherty PA and the output circuit of the peaking amplifier, respectively. The multi-section output matching having the same impedance transformation and a broadband input matching are utilized. A Wilkinson power divider is transformed into a lumped type and integrated on a chip for enhancing the bandwidth of Doherty operation. For a LTE signal with a 7.5-dB peak-to-average power ratio (PAPR) and a 10-MHz BW, the PA with a supply voltage of 4.5 V delivers a power-added efficiency (PAE) of 36.3%, and an adjacent channel leakage ratio (ACLR) of −32 dBc with an average output power of 27.5 dBm at a frequency of 1.85 GHz. Across 1.6–2.1 GHz, the PA performs a PAE of over 30%, a gain of over 28 dB and an ACLR of below −31 dBc at an average output power of 27.5 dBm while satisfying the standard spectrum mask. These results verify that the proposed bandwidth enhancement techniques are effective for the handset Doherty PA.
Starting Page	1
Ending Page	4
File Size	970750
Page Count	4
File Format	PDF
ISBN	9781612847542
ISSN	0149645X
e-ISBN	9781612847573
e-ISBN	9781612847566
DOI	10.1109/MWSYM.2011.5972657
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2011-06-05
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Wires Heterojunction bipolar transistors Power dividers Frequency modulation power amplifier (PA) Broadband Doherty efficiency hetero-junction bipolar transistors (HBT) linearity long term evolution (LTE) MMIC
Content Type	Text
Resource Type	Article
Subject	Condensed Matter Physics Electrical and Electronic Engineering Radiation

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