NDLI: Tunable impedance matching networks for agile RF power amplifiers

Content Provider	IEEE Xplore Digital Library
Author	Maune, H. Sazegar, M. Jakoby, R.
Copyright Year	2011
Description	Author affiliation: Microwave Engineering, Technische Universität Darmstadt, Germany (Maune, H.; Sazegar, M.; Jakoby, R.)
Abstract	The efficiency is one of the most critical parameters in the design of RF power amplifiers. For classical power amplifier (PA) the efficiency drops dramatically in the back-off region. One possibility of enhancing the properties of the PA is the implementation of a load modulation as used in the Doherty topology. The idea of using an adaptive impedance matching network at the output of the transistor is presented and analyzed in this paper. The topology of the matching network enables the connection of the matching circuit directly to the transistor. The matching network has been designed using the minimum mean square error method and realized on a BST thick film substrate. The measured input impedance is in the range of several ohms for a load of 50Ohm as required for power amplifiers.
Starting Page	1
Ending Page	4
File Size	1173653
Page Count	4
File Format	PDF
ISBN	9781612847542
ISSN	0149645X
e-ISBN	9781612847573
e-ISBN	9781612847566
DOI	10.1109/MWSYM.2011.5972681
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2011-06-05
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Varactors Transistors Tuning Linearity Impedance matching Inductors Topology Power Amplifier Tunable Components Ferroelectrics BST
Content Type	Text
Resource Type	Article
Subject	Condensed Matter Physics Electrical and Electronic Engineering Radiation

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