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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Bennett, M.F. Bittner, Z.S. Forbes, D.V. Tatavarti, R. Wibowo, A. Pan, N. Chern, K. Hubbard, S.M. |
| Copyright Year | 2013 |
| Description | Author affiliation: Rochester Inst. of Technol., Rochester, NY, USA (Bennett, M.F.; Bittner, Z.S.; Forbes, D.V.; Hubbard, S.M.) |
| Abstract | Embedded nanostructures such as quantum dots (QDs) have been studied for many applications including enhanced mini-band absorption in intermediate-band solar cells and current matching in multi junction cells. Furthermore, solar cells with QDs have shown a radiation hardness and temperature tolerance that has been improved by adding nanostructures. InAs/GaAs QD cells were grown by MOVPE, fabricated and processed by epitaxial lift off, creating thin and flexible devices that exhibit enhanced sub-GaAs bandgap current collection. Due to the thinning of these devices, the sub-GaAs bandgap eternal quantum efficiency curves are more pronounced than those for a thicker cell, indicating the presence of a cavity mode effect. Champion devices incorporating QDs have short circuit currents exceeding those of baseline samples with no QDs by an absolute value of 0.12 $mA/cm^{2}$ under 1-sun AM0 illumination. In addition to optical, materials, and electrical characterization, devices were exposed to alpha radiation to gauge the effects of a harmful environment on cell performance. In this area QD cells also outperformed baseline devices, with a relative end of life remaining maximum power factor increase of 10%. |
| Sponsorship | IEEE Electron Devices Soc. |
| Starting Page | 2784 |
| Ending Page | 2789 |
| File Size | 1409799 |
| Page Count | 6 |
| File Format | |
| DOI | 10.1109/PVSC.2013.6745050 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2013-06-16 |
| Publisher Place | USA |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Photovoltaic cells Gallium arsenide Absorption Junctions Photonic band gap Strain Epitaxial growth quantum dots epitaxial lift off gallium arsenide |
| Content Type | Text |
| Resource Type | Article |
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