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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Ruangdet, S. Thainoi, S. Kanjanachuchai, S. Panyakeow, S. |
| Copyright Year | 2006 |
| Description | Author affiliation: Dept. of Electr. Eng., Chulalongkorn Univ., Bangkok (Ruangdet, S.; Thainoi, S.; Kanjanachuchai, S.; Panyakeow, S.) |
| Abstract | InAs quantum dot molecules (QDMs) are prepared by thin-capping-and-regrowth MBE process. The dot density can be varied between $10^{10}$ $cm^{-2},$ for as-grown quantum dots (QDs), to $10^{12}$ $cm^{-2},$ for multi-stack QDMs. Photocurrent measurements on 1-and 5-stack high-density QDM layers show that these InAs QDMs when embedded inside a GaAs bulk structure extend photon absorption beyond the 850-nm bandedge limited by GaAs. The results also indicate that the higher the number of stacks the higher the resulting current. The presence of high-density QDMs in solar cells thus extends the absorption region and at the same time increase the output current. Electrical characterisations on homojunction (p-n) solar cells with 1-and 5-stack high-density QDMs embedded between the junction show that the 5-stack sample provides a higher short-circuit current density of $J_{sc}=14.4$ $mA/cm^{2}$ compared to 9.6 mA/cm $^{2}$ provided by the 1-stack sample. The increase is due entirely to the difference in absorptive dot volume accounted for by the difference in the number of stacks of high-density InAs QDMs. The efficiency of homo-structure 5-stack high-density QDM solar cell is 5.1% |
| Sponsorship | IEEE Electron Devices Soc |
| Starting Page | 225 |
| Ending Page | 228 |
| File Size | 1494562 |
| Page Count | 4 |
| File Format | |
| ISBN | 1424400163 |
| DOI | 10.1109/WCPEC.2006.279430 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2006-05-07 |
| Publisher Place | USA |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Quantum dots Photovoltaic cells Gallium arsenide Absorption Photonic band gap Semiconductor materials Molecular beam epitaxial growth Lead compounds Wide band gap semiconductors Substrates |
| Content Type | Text |
| Resource Type | Article |
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