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Content Provider | IEEE Xplore Digital Library |
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Author | Fiamozzi Zignani, C. Corato, V. della Corte, A. Di Zenobio, A. Messina, G. Muzzi, L. |
Copyright Year | 2002 |
Abstract | We report on the simulation of the current distribution in Nb3Sn strand subjected to pure bending strain, obtained by resolving the implicit diffusion equations with finite difference algorithm in Mathworks environment. The critical current dependence on bending, temperature, and magnetic field is modeled by the Improved Deviatoric Scaling Law and is used in the power law electric field dependence across the superconductor. The strand is discretized in elements representing groups of twisted filaments embedded in the stabilization matrix and a distributed constant circuit model is applied for current transfer among filament bundles. The code is preliminarily validated by comparison with analytical solutions for different simplified situations, each one corresponding to a proper boundary condition. Transverse matrix resistivity and twist-pitch values are crucial elements for matching numerical results with experimentally measured critical currents. |
Sponsorship | Council on Superconductivity Appl. Superconductivity Conference Inc MIT |
Starting Page | 2641 |
Ending Page | 2644 |
Page Count | 4 |
File Size | 439369 |
File Format | |
ISSN | 10518223 |
Volume Number | 19 |
Issue Number | 3 |
Language | English |
Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
Publisher Date | 2009-06-01 |
Publisher Place | U.S.A. |
Access Restriction | One Nation One Subscription (ONOS) |
Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
Subject Keyword | Finite difference methods Tin Magnetic field induced strain Critical current Current distribution Niobium Difference equations Temperature dependence Superconducting filaments and wires Circuits numerical simulation Bending strain critical current current distribution ${\rm Nb}_{3}{\rm Sn}$ |
Content Type | Text |
Resource Type | Article |
Subject | Condensed Matter Physics Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering |
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