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Content Provider | IEEE Xplore Digital Library |
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Author | Shtrikman, H. Popovitz-Biro, R. von Huth, P. Kretinin, A. Heiblum, M. |
Copyright Year | 2010 |
Description | Author affiliation: Braun Center for Submicron Research, The Weizmann Institute of Science, Rehovot, Israel (Shtrikman, H.; Kretinin, A.; Heiblum, M.) || Electron Microscopy Unit, The Weizmann Institute of Science, Rehovot, Israel (Popovitz-Biro, R.; von Huth, P.) |
Abstract | The objective of this work was to achieve control over MBE growth of GaAs core-shell nanowires using the gold assisted VLS method, thereby facilitating formation of either pure Wurtzite (WZ) or pure Zinc Blende (ZB) wires. Growth of WZ type wires relies on initial nucleation of a thin (≤10nm) GaAs wire which, based upon theoretical calculations, is expected to be free of SF. Preferential nucleation of pure ZB type wires required a respective reduction of the supersaturation, so as to simulate the conditions, which dominate the growth of epitaxy/bulk material. A shell composed of AlAs layer and a capping GaAs layer was applied in situ to both types of wires in order to form confined structures for optical and electronic applications. |
Starting Page | 103 |
Ending Page | 104 |
File Size | 2419622 |
Page Count | 2 |
File Format | |
ISBN | 9781424435432 |
DOI | 10.1109/INEC.2010.5424555 |
Language | English |
Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
Publisher Date | 2010-01-03 |
Publisher Place | China |
Access Restriction | Subscribed |
Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
Subject Keyword | Gold Scanning electron microscopy Wires Gallium arsenide Molecular beam epitaxial growth Optical materials Nanowires Epitaxial growth Optical devices Substrates |
Content Type | Text |
Resource Type | Article |
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