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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Bauer, M. Ramer, A. Boppel, S. Chevtchenko, S. Lisauskas, A. Heinrich, W. Krozer, V. Roskos, H.G. |
| Copyright Year | 2015 |
| Description | Author affiliation: Ferdinand-Braun-Inst., Leibniz-Inst. fur Hochstfrequenztechnik, Berlin, Germany (Ramer, A.; Chevtchenko, S.; Heinrich, W.) || Phys. Inst., Johann Wolfgang Goethe-Univ., Frankfurt am Main, Germany (Bauer, M.; Boppel, S.; Lisauskas, A.; Krozer, V.; Roskos, H.G.) |
| Abstract | This paper reports on antenna-coupled field-effect transistors for the detection of terahertz radiation (Ter-aFETs), based on AlGaN/GaN high electron mobility transistors (HEMTs). The HEMTs are integrated on-chip with bow-tie antennas. The broadband sensitivity of the fabricated detectors was characterized in the frequency range from 0.4 up to 1.18 THz. We reach record values of optical noise equivalent power (NEP) down to 57 pW/√Hz at 0.9 THz. These values are the result of antenna and fabrication process optimization as well as modelling including plasmonic effects. |
| Starting Page | 1 |
| Ending Page | 4 |
| File Size | 184608 |
| Page Count | 4 |
| File Format | |
| ISBN | 9782874870408 |
| DOI | 10.1109/EuMIC.2015.7345053 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2015-09-07 |
| Publisher Place | France |
| Access Restriction | Subscribed |
| Rights Holder | EuMA |
| Subject Keyword | bow-tie antenna Detectors GaN HEMT terahertz detectors HEMTs Logic gates integrated field-effect transistors plasmonic detection MODFETs Gallium nitride Antennas |
| Content Type | Text |
| Resource Type | Article |
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