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Content Provider | IEEE Xplore Digital Library |
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Author | Younkyu Chung Hang, C.Y. Shujun Cai Yongxi Qian Wen, C.P. Wang, K.L. Toh, T. |
Copyright Year | 2002 |
Description | Author affiliation: Dept. of Electr. Eng., California Univ., Los Angeles, CA, USA (Younkyu Chung; Hang, C.Y.; Shujun Cai) |
Abstract | In this paper, effects of output harmonic terminations on PAE and output power of AlGaN/GaN HEMT power amplifier are investigated. Using a traditional method of harmonic termination, we observe a substantial increase in PAE and output power. Further, we demonstrate the high efficiency AlGaN/GaN HEMT power amplifier with harmonic termination characteristics by using the active integrated antenna approach. For the microstrip-based AlGaN/GaN HEMT power amplifier, large signal measurements and comparisons of PAE and output power were done in class-AB operation with and without output harmonic terminations. For the antenna integrated power amplifier using an AlGaN/GaN HEMT with 1 mm gate periphery, output power of 30 dBm and peak PAE of 55 % with a power gain of 14 dB were achieved at a drain voltage of 18 V and a gate voltage of -2.8 V. |
Starting Page | 433 |
Ending Page | 436 |
File Size | 300057 |
Page Count | 4 |
File Format | |
ISBN | 0780372395 |
ISSN | 0149645X |
DOI | 10.1109/MWSYM.2002.1011648 |
Language | English |
Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
Publisher Date | 2002-06-02 |
Publisher Place | USA |
Access Restriction | Subscribed |
Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
Subject Keyword | Power system harmonics Aluminum gallium nitride Gallium nitride HEMTs Power amplifiers Power generation Voltage High power amplifiers Microstrip Operational amplifiers |
Content Type | Text |
Resource Type | Article |
Subject | Condensed Matter Physics Electrical and Electronic Engineering Radiation |
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