NDLI: Efficient AlGaN/GaN HEMT Power Amplifiers

Content Provider	IEEE Xplore Digital Library
Author	Quay, R. van Raay, F. Kuhn, J. Kiefer, R. Waltereit, P. Zorcic, M. Musser, M. Bronner, W. Dammann, M. Seelmann-Eggebert, M. Schlechtweg, M. Mikulla, M. Ambacher, O. Thorpe, J. Riepe, K. van Rijs, F. Saad, M. Harm, L. Rodle, T.
Copyright Year	2008
Description	Author affiliation: NXP Semicond., Nijmegen, Netherlands (van Rijs, F.; Saad, M.; Harm, L.; Rodle, T.) \|\| Fraunhofer Inst. for Appl. Solid-State Phys., Freiburg, Germany (Quay, R.; van Raay, F.; Kuhn, J.; Kiefer, R.; Waltereit, P.; Zorcic, M.; Musser, M.; Bronner, W.; Dammann, M.; Seelmann-Eggebert, M.; Schlechtweg, M.; Mikulla, M.; Ambacher, O.) \|\| United Monolithic Semicond., Ulm, Germany (Thorpe, J.; Riepe, K.)
Abstract	This paper describes efficient GaN/AlGaN HEMTs and MMICs for L/S-band (1-4 GHz) and X-band frequencies (8-12 GHz) on three-inch s.i. SiC substrates. Dual-stage MMICs in microstrip transmission-line technology yield a power-added efficiency of ¿40% at 8.56 GHz for a power level of ¿11 W. A single-stage MMIC yields a PAE of ¿55% with 6 W of output power at $V_{DS}=$ 20 V. The related mobile communication power HEMT process yields an average power density of 10 W/mm at 2 GHz and $V_{DS}=$ 50 V. The average PAE is 61.3% with an average linear gain 24.4 dB and low standard deviation of all parameters. The devices yield more than 25 W/mm of output power at 2 GHz when operated in cw at $V_{DS}=$ 100 V with an associated PAE of ¿60%. The GaN HEMT process with 0.5 ¿m gate-length yields an extrapolated lifetime of $10^{5}$ h when operated at $V_{DS}=$ 50 V at a channel temperature of 90°C. When operated at 2 GHz devices with 480 ¿m gate-width yield a change of the RF power-gain of less than 0.2 dB under high gain-compression at $V_{DS}=$ 50 V and a channel temperature of 250°C.
Starting Page	87
Ending Page	90
File Size	964154
Page Count	4
File Format	PDF
ISBN	9782874870071
DOI	10.1109/EMICC.2008.4772235
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2008-10-27
Publisher Place	Netherlands
Access Restriction	Subscribed
Rights Holder	European Microwave Assoc.
Subject Keyword	Temperature Silicon carbide Power amplifiers HEMTs MMICs Frequency Microstrip Gallium nitride Aluminum gallium nitride Power generation
Content Type	Text
Resource Type	Article

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4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
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