NDLI: Comparison of POCl diffusion with phosphorus ion implantation for Czochralski and Quasi-mono silicon solar cells

Content Provider	IEEE Xplore Digital Library
Author	Eunhwan Cho Youngwoo Ok Kyungsun Ryu Rounsaville, B. Upadhyaya, A.D. Upadhyaya, V. Rohatgi, A.
Copyright Year	2014
Description	Author affiliation: Georgia Inst. of Technol., Atlanta, GA, USA (Eunhwan Cho; Youngwoo Ok; Kyungsun Ryu; Rounsaville, B.; Upadhyaya, A.D.; Upadhyaya, V.; Rohatgi, A.)
Abstract	Both ion implanted and $POCl_{3}$ diffused emitters are used for industrial production of p-type Si solar cells. Formation of phosphorus doped emitter is known to perform gettering of impurities, however, gettering efficiency of these two diffusion techniques is not well quantified for single crystal Cz Si and Cast multi or Quasi-mono Si wafers. In addition, ion implantation can provide higher quality emitter with in situ oxide passivation[1]. This paper compares the performance of Quasi-mono and Cz Si cells fabricated with $POCl_{3}$ and ion-implanted emitters. Quasi-mono wafers have more defects and are expected to benefit from gettering. Large area screen printed p-type industrial cells with full Al-BSF cell structure were fabricated on commercial grade single crystal Cz Si and two different Cast Quasi-mono Si wafers with 50% and 80% mono-crystalline regions. Bulk lifetime was measured to evaluate the gettering efficiency of each technology before and after each emitter formation[2]. $POCl_{3}$ diffusion gave greater improvement in bulk lifetime of Quasi-mono wafers compared to ion implanted wafers, resulting in 0.7 ~ 1% higher absolute efficiency and over 5 ~ 15mV higher Voc compared to the implanted cells. However, in the case of Cz cells, bulk lifetime remained high and comparable for the two emitters. Therefore, Cz cells with implanted emitter gave 0.4% higher efficiency and 7mV higher Voc due to a higher quality emitter with in situ front oxide passivation.
Starting Page	2966
Ending Page	2968
File Size	276417
Page Count	3
File Format	PDF
e-ISBN	9781479943982
DOI	10.1109/PVSC.2014.6925554
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2014-06-08
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Silicon Gettering MONOS devices Passivation Photovoltaic cells Crystals Quasi-mono Ion implantation Multi-crystalline Silicon Mono Cast POCl3 Diffusion
Content Type	Text
Resource Type	Article

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1	Ministry of Education (GoI), Department of Higher Education	Sanctioning Authority	https://www.education.gov.in/ict-initiatives
2	Indian Institute of Technology Kharagpur	Host Institute of the Project: The host institute of the project is responsible for providing infrastructure support and hosting the project	https://www.iitkgp.ac.in
3	National Digital Library of India Office, Indian Institute of Technology Kharagpur	The administrative and infrastructural headquarters of the project	Dr. B. Sutradhar bsutra@ndl.gov.in
4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
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