NDLI: Waveguiding in InGaN/GaN/AlGaN blue laser structures

Content Provider	IEEE Xplore Digital Library
Author	Buda, M. Jagadish, C. Acket, G.A. Wolter, J.H.
Copyright Year	2000
Description	Author affiliation: COBRA Interuniversity Res. Inst. on Commun. Technol., Eindhoven, Netherlands (Buda, M.)
Abstract	Symmetric InGaN/GaN/AlGaN conventional blue laser waveguides are analyzed. It is shown that due to the limited thickness of the confinement layers, the confinement factor in the active region and the modal absorption are considerably influenced by the substrate and GaN buffer layers. These phenomena are due to the coupling of the light outside of the active region in the substrate and buffer layers and show resonances with respect to the thickness of the buffer layer. These effects may strongly affect the gain, the near-field and the far-field of the lasing mode, specially if the substrate is SiC or GaN. In order to optimize the laser waveguide an alternative structure is proposed with a few microns thick AlGaN buffer layer instead of the usual GaN buffer layer. We also propose to use asymmetric structures where the extension of the optical field is minimized in the p-side and extended in the n-regions.
Starting Page	438
Ending Page	442
File Size	441486
Page Count	5
File Format	PDF
ISBN	0780366980
DOI	10.1109/COMMAD.2000.1022984
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2000-12-06
Publisher Place	Australia
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Gallium nitride Aluminum gallium nitride Buffer layers Waveguide lasers Optical waveguides Absorption Optical coupling Resonance Silicon carbide Laser modes
Content Type	Text
Resource Type	Article

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