NDLI: Microstructural characterization of sol-gel derived Ga/sub 2/O/sub 3/-TiO/sub 2/ thin films for gas sensing

Content Provider	IEEE Xplore Digital Library
Author	Li, Y.X. Wang, D. Yin, Q.R. Galatsis, K. Wlodarski, W.
Copyright Year	2000
Description	Author affiliation: Lab. of Functional Inorg. Mater., SICCAS, Shanghai, China (Li, Y.X.; Wang, D.; Yin, Q.R.)
Abstract	Binary TiO/sub 2/-Ga/sub 2/O/sub 3/ thin films were prepared from the sol-gel process. Titanium butoxide and gallium isopropoxide were used as precursor materials. The mixed solution was spun onto the sapphire and silicon substrates at 2500 rpm for 30 s to prepare thin films. The X-Ray Diffraction (XRD) results revealed that the films annealed at a temperature of 500/spl deg/C for 1 hr is /spl gamma/-Ga/sub 2/O/sub 3/ structure. Scanning Electronic Microscope (SEM) images revealed that the film surface is smooth with grains in a nanometer scale. The film showed good responses to 100 ppm, 1000 ppm and 1% O/sub 2/ at an operating temperature of 470/spl deg/C. The resistance of Ga-doped TiO/sub 2/ film is between the resistances of pure TiO/sub 2/ and Ga/sub 2/O/sub 3/ films. The response of Ga-doped TiO/sub 2/ thin film is sensitive, fast and stable to oxygen gas.
Starting Page	363
Ending Page	366
File Size	418059
Page Count	4
File Format	PDF
ISBN	0780366980
DOI	10.1109/COMMAD.2000.1022965
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2000-12-06
Publisher Place	Australia
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Gallium Transistors Temperature Scanning electron microscopy Titanium Silicon Substrates Semiconductor thin films X-ray imaging X-ray diffraction
Content Type	Text
Resource Type	Article

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