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Content Provider | IEEE Xplore Digital Library |
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Author | Li, Y.X. Wang, D. Yin, Q.R. Galatsis, K. Wlodarski, W. |
Copyright Year | 2000 |
Description | Author affiliation: Lab. of Functional Inorg. Mater., SICCAS, Shanghai, China (Li, Y.X.; Wang, D.; Yin, Q.R.) |
Abstract | Binary TiO/sub 2/-Ga/sub 2/O/sub 3/ thin films were prepared from the sol-gel process. Titanium butoxide and gallium isopropoxide were used as precursor materials. The mixed solution was spun onto the sapphire and silicon substrates at 2500 rpm for 30 s to prepare thin films. The X-Ray Diffraction (XRD) results revealed that the films annealed at a temperature of 500/spl deg/C for 1 hr is /spl gamma/-Ga/sub 2/O/sub 3/ structure. Scanning Electronic Microscope (SEM) images revealed that the film surface is smooth with grains in a nanometer scale. The film showed good responses to 100 ppm, 1000 ppm and 1% O/sub 2/ at an operating temperature of 470/spl deg/C. The resistance of Ga-doped TiO/sub 2/ film is between the resistances of pure TiO/sub 2/ and Ga/sub 2/O/sub 3/ films. The response of Ga-doped TiO/sub 2/ thin film is sensitive, fast and stable to oxygen gas. |
Starting Page | 363 |
Ending Page | 366 |
File Size | 418059 |
Page Count | 4 |
File Format | |
ISBN | 0780366980 |
DOI | 10.1109/COMMAD.2000.1022965 |
Language | English |
Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
Publisher Date | 2000-12-06 |
Publisher Place | Australia |
Access Restriction | Subscribed |
Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
Subject Keyword | Gallium Transistors Temperature Scanning electron microscopy Titanium Silicon Substrates Semiconductor thin films X-ray imaging X-ray diffraction |
Content Type | Text |
Resource Type | Article |
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