NDLI: High performance strained and DH Ga/sub 1-x/In/sub x/P/In/sub 0.2/Ga/sub 0.8/As/GaAs HEMTs grown by solid-source MBE using valved cracker cells

Content Provider	IEEE Xplore Digital Library
Author	Yoon, S.F. Gay, B.P. Zheng, H.Q. Kam, H.T. Degenhardt, J.
Copyright Year	2000
Description	Author affiliation: Sch. of Electr. & Electron. Eng., Nanyang Technol. Univ., Singapore (Yoon, S.F.)
Abstract	Double heterojunction (DH) In/sub 0.48/Ga/sub 0.52/P/In/sub 0.20/Ga/sub 0.80/As and strained single heterojunction (SSH) In/sub 0.40/Ga/sub 0.60/P/In/sub 0.20/Ga/sub 0.80/As/GaAs high electron mobility transistor (HEMT) structures were grown by solid-source molecular beam epitaxy (SSMBE) using a valved phosphorus cracker cell. The DC and RF performance of the SSH-HEMT and DH-HEMT were compared with the single heterojunction (SH) HEMT. The results show a significant improvement in device characteristics in the SSH-HEMT with In/sub 0.40/Ga/sub 0.60/P spacer and Schottky layer, due to better carrier confinement in the channel. The SSH-HEMT with 0.35-/spl mu/m gate length exhibits a peak transconductance (G/sub m/) of 470 mS/mm, maximum drain current (I/sub DSmax/) of 550 mA/mm, and current gain cut-off frequency (f/sub T/) of 50 GHz. These values are approximately 7%, 10% and 25% higher than the respective values for a DH-HEMT of identical gate length.
Starting Page	126
Ending Page	129
File Size	432718
Page Count	4
File Format	PDF
ISBN	0780363205
ISSN	10928669
DOI	10.1109/ICIPRM.2000.850248
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2000-05-14
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	DH-HEMTs Heterojunctions HEMTs Gallium arsenide MODFETs Molecular beam epitaxial growth Radio frequency Carrier confinement Transconductance Cutoff frequency
Content Type	Text
Resource Type	Article

Sl.	Authority	Responsibilities	Communication Details
1	Ministry of Education (GoI), Department of Higher Education	Sanctioning Authority	https://www.education.gov.in/ict-initiatives
2	Indian Institute of Technology Kharagpur	Host Institute of the Project: The host institute of the project is responsible for providing infrastructure support and hosting the project	https://www.iitkgp.ac.in
3	National Digital Library of India Office, Indian Institute of Technology Kharagpur	The administrative and infrastructural headquarters of the project	Dr. B. Sutradhar bsutra@ndl.gov.in
4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
5	Website/Portal (Helpdesk)	Queries regarding NDLI and its services	support@ndl.gov.in
6	Contents and Copyright Issues	Queries related to content curation and copyright issues	content@ndl.gov.in
7	National Digital Library of India Club (NDLI Club)	Queries related to NDLI Club formation, support, user awareness program, seminar/symposium, collaboration, social media, promotion, and outreach	clubsupport@ndl.gov.in
8	Digital Preservation Centre (DPC)	Assistance with digitizing and archiving copyright-free printed books	dpc@ndl.gov.in
9	IDR Setup or Support	Queries related to establishment and support of Institutional Digital Repository (IDR) and IDR workshops	idr@ndl.gov.in

(Al/sub x/Ga/sub 1-x/)/sub 0.5/In/sub 0.5/P barrier layer grown by gas source molecular beam epitaxy for V-band (Al/sub x/Ga/sub 1-x/)/sub 0.5/In/sub 0.5/P/In/sub 0.2/Ga/sub 0.8/As/GaAs power pseudomorphic HEMT

Metamorphic HFETs with composite In/sub 0.8/Ga/sub 0.2/As/InAs/In/sub 0.8/Ga/sub 0.2/As channels on GaAs substrate

Single- and double-heterojunction pseudomorphic In/sub 0.5/(Al/sub 0.3/Ga/sub 0.7/)/sub 0.5/P/In/sub 0.2/Ga/sub 0.8/As high electron mobility transistors grown by gas source molecular beam epitaxy

High-power V-band Ga/sub 0.51/In/sub 0.49/P/In/sub 0.2/Ga/sub 0.8/As pseudomorphic HEMT grown by gas source molecular beam epitaxy

High quality pseudomorphic InGaAs/GaAs HFET structures grown by MBE

A Novel Dilute Antimony Channel $hbox{In}_{0.2}hbox{Ga}_{0.8}hbox{AsSb}/hbox{GaAs}$ HEMT

6.2 /spl Aring/ In/sub 0.2/Al/sub 0.8/Sb/InAs/sub 0.7/Sb/sub 0.3/ HEMTs for low voltage high-frequency applications

Metamorphic In/sub 0.52/Al/sub 0.48/As/In/sub 0.53/Ga/sub 0.47/As HEMTs on GaAs substrate with f/sub T/ over 200 GHz

InP-based strained In/sub 0.8/Ga/sub 0.2/As/AlAs resonant tunneling diodes with high peak-current density and large peak-to-valley current ratio grown by metal-organic vapor-phase epitaxy

High performance strained and DH Ga/sub 1-x/In/sub x/P/In/sub 0.2/Ga/sub 0.8/As/GaAs HEMTs grown by solid-source MBE using valved cracker cells

Similar Documents

(Al/sub x/Ga/sub 1-x/)/sub 0.5/In/sub 0.5/P barrier layer grown by gas source molecular beam epitaxy for V-band (Al/sub x/Ga/sub 1-x/)/sub 0.5/In/sub 0.5/P/In/sub 0.2/Ga/sub 0.8/As/GaAs power pseudomorphic HEMT

Metamorphic HFETs with composite In/sub 0.8/Ga/sub 0.2/As/InAs/In/sub 0.8/Ga/sub 0.2/As channels on GaAs substrate

Single- and double-heterojunction pseudomorphic In/sub 0.5/(Al/sub 0.3/Ga/sub 0.7/)/sub 0.5/P/In/sub 0.2/Ga/sub 0.8/As high electron mobility transistors grown by gas source molecular beam epitaxy

High-power V-band Ga/sub 0.51/In/sub 0.49/P/In/sub 0.2/Ga/sub 0.8/As pseudomorphic HEMT grown by gas source molecular beam epitaxy

High quality pseudomorphic InGaAs/GaAs HFET structures grown by MBE

A Novel Dilute Antimony Channel $hbox{In}_{0.2}hbox{Ga}_{0.8}hbox{AsSb}/hbox{GaAs}$ HEMT

6.2 /spl Aring/ In/sub 0.2/Al/sub 0.8/Sb/InAs/sub 0.7/Sb/sub 0.3/ HEMTs for low voltage high-frequency applications

Metamorphic In/sub 0.52/Al/sub 0.48/As/In/sub 0.53/Ga/sub 0.47/As HEMTs on GaAs substrate with f/sub T/ over 200 GHz

InP-based strained In/sub 0.8/Ga/sub 0.2/As/AlAs resonant tunneling diodes with high peak-current density and large peak-to-valley current ratio grown by metal-organic vapor-phase epitaxy

High performance strained and DH Ga/sub 1-x/In/sub x/P/In/sub 0.2/Ga/sub 0.8/As/GaAs HEMTs grown by solid-source MBE using valved cracker cells