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Content Provider | IEEE Xplore Digital Library |
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Author | Hong Wang Geok Ing Ng |
Copyright Year | 2000 |
Description | Author affiliation: Sch. of Electr. & Electron. Eng., Nanyang Technol. Univ., Singapore (Hong Wang) |
Abstract | Low temperature transport properties of InP/InGaAs double heterojunction bipolar transistors (DHBTs) have been carefully investigated. The mechanisms for the devices operating in different temperature range have been clearly identified. The base current in the temperature range of 240 to 300 K is dominated by electron-hole band-to-band recombination and trap related recombination. In the temperature range of 77 K to 240 K, trap related recombination mechanism plays a important role in determining the base current. For temperature lower than 77 K, both collector and base currents are found to be limited by the electron tunneling through the barrier formed by conduction-band discontinuity at E-B junction. |
Starting Page | 138 |
Ending Page | 141 |
File Size | 362607 |
Page Count | 4 |
File Format | |
ISBN | 0780363205 |
ISSN | 10928669 |
DOI | 10.1109/ICIPRM.2000.850251 |
Language | English |
Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
Publisher Date | 2000-05-14 |
Publisher Place | USA |
Access Restriction | Subscribed |
Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
Subject Keyword | Indium phosphide Indium gallium arsenide Temperature distribution Double heterojunction bipolar transistors Cryogenics Temperature dependence Spontaneous emission Degradation Electron traps Superconducting microwave devices |
Content Type | Text |
Resource Type | Article |
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