NDLI: Bipolar resonant tunneling light emitting diodes

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1997 Proceedings IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits

Proceedings IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits

Proceedings of IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits

[1991] Proceedings IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits

Proceedings IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits (Cat. No.91CH3092-4)

High speed modulation of InP-based strained quantum well lasers

High-speed short cavity strained-layer multiple quantum well lasers

Integrated distributed feedback laser and optical amplifier

A unified process for fabricating lasers, detectors, modulators, and waveguides

Monolithic coaxial transmission lines for mm-wave ICs

A 2.3 ps time-domain reflectometer for millimeter-wave network analysis

Polytype InAs/AlSb/GaSb for field-effect transistor applications

AlGaAs/GaAs HBT for linear and saturated power application

Parameter extraction technique for accurate measurement of minority electron mobility in N-p-n AlGaAs/GaAs HBTs

Design and fabrication of submicrometer AlGaAs/GaAs HBTs grown by LPOMVPE

Harmonic cancellation in monolithic AlGaAs/GaAs Npn/Pnp HBT push-pull pairs

High frequency large signal characterization of heterojunction bipolar transistors

High performance HBTs with built-in base fields: exponentially-graded doping vs. graded composition

Electrical and thermal characteristics of heterojunction bipolar transistors fabricated on peeled film epitaxial layers

Simulation of small semiconductor devices using a coupled Monte Carlo-Poisson approach

Investigation of transit times in SiGe structures: a Monte-Carlo approach

Hot electrons cathodes in high speed three-terminal devices: do they really make a difference?

A non-quasi-static collector model for HBTs

Yield optimization using a GaAs process simulator coupled to a physical device model

Band-coupling effect on the frequency limit of resonant-tunneling diodes

Simulated performance optimization of GaAs MESFET amplifiers

High speed transport and optoelectronic properties of InAs heterostructures

Integrated silicon sensors: technology and microstructures

Design issues for SiGe heterojunction FETs

RF-current de-confinement in III-V HFETs

High speed cryogenic operation of sub-micron pseudomorphic InGaAs/GaAs FETs

High gain W-band InGaAs-InAlAs-InP HEMTs for low noise W-band applications

High performance W-band low noise and power pseudomorphic InGaAs HEMTs

Millimeter wave power performance of InAlAs/InGaAs/InP HEMTs

Gallium arsenide metal-insulator-semiconductor field effect transistors (MISFET) with low temperature GaAs insulating layers

Research trends in optoelectronic integrated circuits

Epitaxial thin film growth and device development in monocrystalline alpha and beta silicon carbide

Integrated circuits using resonant-tunneling hot electron transistors (RHETs)

High quality GaAs-based resonant tunneling diodes for high frequency device applications

Design and fabrication of heterostructure varactor diodes for millimeter and submillimeter wave multiplier applications

Bipolar resonant tunneling light emitting diodes

The features of hole resonant tunneling in Si/sub 1-x/Ge/sub x//Si double barrier structures

Uncertainty and sensitivity analysis in high speed device modeling

The origin of the temperature dependence in resonant tunneling transport

Inclusion of the inertial effects in the drift-diffusion equation

Control of InP/InGaAs heterojunction bipolar transistor performance through the use of undoped collectors

Characterization of low temperature GaAs buffer

Scaling studies of GaAs FETs using a novel technique for simulation of non-stationary transport

A study of electron transit-time in ballistic diodes using a multi-valley hydrodynamic transport model

Gate-recess and device geometry impact on the microwave performance and noise properties of 0.1 mu m InAlAs/InGaAs HEMT's

Emitter structure influence on the electron transport mechanism in resonant tunneling diodes

A Monte Carlo simulation of electron transit times in dissipative quantum devices

Extraction of carrier transport and electronic parameters of submicrometer gate-length MODFET's on InP and GaAs substrates

Superconducting digital circuits with low-T/sub c/ and high-T/sub c/ materials

Doping profiles for optimum class B performance of GaAs MESFET amplifiers

Depleted surface layer AlInAs/GaInAs/InP HFETs

Determination of the optimum condition to introduce the doping in the channel of high speed doped channel AlGaAs/InGaAs HFET's

Proceedings., IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits,

IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits, 1987. Proceedings.

Bipolar resonant tunneling light emitting diodes

Content Provider	IEEE Xplore Digital Library
Author	Van Hoof, C. Genoe, J. Mertens, R. Borghs, G. Goovaerts, E.
Copyright Year	1991
Description	Author affiliation: Interuniv. Micro-Electron. Center, Leuven, Belgium (Van Hoof, C.; Genoe, J.; Mertens, R.; Borghs, G.)
Abstract	Electroluminescence originating from a resonant tunneling structure inside a GaAs p-n junction is investigated. The presence of electron and hole resonant tunneling is evident both in the electrical and in the spectral observations. Electron and hole accumulation inside the resonant tunneling structure is revealed from the electroluminescence linewidth. The electroluminescence intensity is strongly bias dependent and is correlated to the electron and hole population of the subbands in the resonant tunneling structure. Optical on-off ratios of up to 15:1 at 77 K between the electrical on- and off-resonance states are observed.
Starting Page	58
Ending Page	65
File Size	378730
Page Count	8
File Format	PDF
ISBN	0780304918
DOI	10.1109/CORNEL.1991.170033
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1991-08-05
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Resonant tunneling devices Light emitting diodes Gallium arsenide High speed optical techniques Optical buffering Charge carrier processes Optical films Electroluminescence Stimulated emission Electron optics
Content Type	Text
Resource Type	Article

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