NDLI: Electrical and thermal characteristics of heterojunction bipolar transistors fabricated on peeled film epitaxial layers

Content Provider	IEEE Xplore Digital Library
Author	Cheney, M.E. Fitch, R.C. Robinson, G.D. Huang, C.I. Neidhard, R.A.
Copyright Year	1991
Description	Author affiliation: Wright Lab., Wright-Patterson AFB, OH, USA (Cheney, M.E.; Fitch, R.C.)
Abstract	The feasibility of peeling the active AlGaAs/GaAs heterojunction bipolar transistor (HBT) epitaxial thin films from the original GaAs substrate and the subsequent van der Waals bonding of the films to AlN, InP and diamond on silicon substrates is discussed. HBTs were first fabricated on epitaxial layers containing an AlAs separating layer. The wafer was divided, and a portion of the wafer was then peeled and van der Waals bonded to various substrates. The van der Waals bond demonstrated excellent thermal and mechanical stability by withstanding subsequent processing steps up to 250 degrees C. The lifted devices bonded to the higher thermal conductivity substrates show excellent DC and RF performance. The average device junction temperature was also characterized. Further improvements can be accomplished by utilizing substrates with a smooth surface morphology having a high thermal conductivity.
Starting Page	334
Ending Page	337
File Size	213004
Page Count	4
File Format	PDF
ISBN	0780304918
DOI	10.1109/CORNEL.1991.170002
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1991-08-05
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Substrates Wafer bonding Thermal conductivity Gallium arsenide Heterojunction bipolar transistors Semiconductor thin films Thin film transistors Semiconductor films Indium phosphide Silicon
Content Type	Text
Resource Type	Article

Sl.	Authority	Responsibilities	Communication Details
1	Ministry of Education (GoI), Department of Higher Education	Sanctioning Authority	https://www.education.gov.in/ict-initiatives
2	Indian Institute of Technology Kharagpur	Host Institute of the Project: The host institute of the project is responsible for providing infrastructure support and hosting the project	https://www.iitkgp.ac.in
3	National Digital Library of India Office, Indian Institute of Technology Kharagpur	The administrative and infrastructural headquarters of the project	Dr. B. Sutradhar bsutra@ndl.gov.in
4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
5	Website/Portal (Helpdesk)	Queries regarding NDLI and its services	support@ndl.gov.in
6	Contents and Copyright Issues	Queries related to content curation and copyright issues	content@ndl.gov.in
7	National Digital Library of India Club (NDLI Club)	Queries related to NDLI Club formation, support, user awareness program, seminar/symposium, collaboration, social media, promotion, and outreach	clubsupport@ndl.gov.in
8	Digital Preservation Centre (DPC)	Assistance with digitizing and archiving copyright-free printed books	dpc@ndl.gov.in
9	IDR Setup or Support	Queries related to establishment and support of Institutional Digital Repository (IDR) and IDR workshops	idr@ndl.gov.in

The heterogeneous integration of InAlAs/InGaAs heterojunction diodes on GaAs: impact of wafer bonding on structural and electrical characteristics

Diffusion of Beryllium in InGaAs Epitaxial Layers

InP/InGaAs collector-up heterojunction bipolar transistors fabricated using Fe-ion-implantation

Optimisation of buffer layers for InP-metamorphic heterojunction bipolar transistor on GaAs

InP/InGaAs heterojunction bipolar transistors with superlattice emitter structure

Double heterojunction bipolar transistors with InP epitaxial layers grown by solid-source MBE

InGaAs/InAlAs quantum wells on wafer bonded InP/GaAs substrates

Metamorphic InP/InGaAs double-heterojunction bipolar transistor structure grown on GaAs by solid source molecular beam epitaxy

Orientation effect on Si/sub 3/N/sub 4/ passivated InP/InGaAs heterojunction bipolar transistors

Electrical and thermal characteristics of heterojunction bipolar transistors fabricated on peeled film epitaxial layers

Similar Documents

The heterogeneous integration of InAlAs/InGaAs heterojunction diodes on GaAs: impact of wafer bonding on structural and electrical characteristics

Diffusion of Beryllium in InGaAs Epitaxial Layers

InP/InGaAs collector-up heterojunction bipolar transistors fabricated using Fe-ion-implantation

Optimisation of buffer layers for InP-metamorphic heterojunction bipolar transistor on GaAs

InP/InGaAs heterojunction bipolar transistors with superlattice emitter structure

Double heterojunction bipolar transistors with InP epitaxial layers grown by solid-source MBE

InGaAs/InAlAs quantum wells on wafer bonded InP/GaAs substrates

Metamorphic InP/InGaAs double-heterojunction bipolar transistor structure grown on GaAs by solid source molecular beam epitaxy

Orientation effect on Si/sub 3/N/sub 4/ passivated InP/InGaAs heterojunction bipolar transistors

Electrical and thermal characteristics of heterojunction bipolar transistors fabricated on peeled film epitaxial layers