NDLI: L10-ordered MnAl thin films with high perpendicular magnetic anisotropy using tin underlayers on Si substrates

Content Provider	IEEE Xplore Digital Library
Author	Huang, E.Y. Kryder, M.H.
Copyright Year	2015
Description	Author affiliation: Electr. & Comput. Eng., Carnegie Mellon Univ., Pittsburgh, PA, USA (Huang, E.Y.; Kryder, M.H.)
Abstract	Ferromagnetic $L1_{0}-ordered$ τ-phase MnAl thin films have been shown to exhibit high perpendicular magnetic anisotropy $(K_{u}$ > $10^{7}$ $ergs/cm^{3}),$ moderate saturation magnetization (M <; 600 $emu/cm^{3}),$ and low Gilbert damping parameter (α = 0.006). x-MnAl is also rare earth- and precious metal-free, making it an attractive candidate for a variety of applications such as magnetic recording, nonvolatile memory technologies, spintronic devices, permanent magnets, etc. However, achieving the necessary $L1_{0}-ordering$ for perpendicular anisotropy in MnAl thin films has proven challenging and highly sensitive to deposition conditions and underlayers used. Using MgO underlayers, we previously demonstrated MnAl thin films with high perpendicular magnetic anisotropy (PMA) on Si substrates for the first time. However, MgO is an insulator, which presents two major challenges. First, MgO must be RF-sputtered, which results in low deposition rates, re-sputtering, and therefore the potential for MgO contamination in undesirable locations. Second, since it is an insulator, MgO impedes the use of MnAl film stacks as the bottom electrode in a magnetic tunnel junction (MTJ) for spintronic applications.
Starting Page	1
Ending Page	1
File Size	312031
Page Count	1
File Format	PDF
e-ISBN	9781479973224
DOI	10.1109/INTMAG.2015.7157550
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2015-05-11
Publisher Place	China
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Films Tin Magnetic tunneling Silicon Substrates Saturation magnetization Fabrication
Content Type	Text
Resource Type	Article

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