NDLI: Implementation of SiC inverter for high frequency, medium voltage applications

Content Provider	IEEE Xplore Digital Library
Author	Sivkov, Oleg Novak, Martin
Copyright Year	2014
Description	Author affiliation: CTU in Prague, FME, Dep. of Instrumentation and Control Engineering, Czech Republic (Sivkov, Oleg; Novak, Martin)
Abstract	This paper describes the experiments with a custom build high frequency SiC inverter. The inverter uses the CCS050M12CM2 module with SiC MOSFET (1200V, 50A). A comparison of SiC MOSFET and Si IGBT modules both from datasheets and different scientific papers showed that SiC MOSFETs have higher efficiency, smaller losses and are capable to work with higher frequency than Si IGBTs. The characteristics of SiC MOSFET and Si IGBT inverter were measured in our laboratory and showed that SiC MOSFET had smaller power static losses and switching losses than Si IGBT, SiC MOSFET had higher efficiency and can operate under higher switching frequency than Si IGBT. The switching characteristics of SiC module have been measured up to a frequency of 30 kHz. The problem of gate-source voltage overshoot is considered here; it is caused by parasitic capacitances and inductances. The correct value of damping resistor is tuned to suppress overshoot.
Starting Page	477
Ending Page	483
File Size	412610
Page Count	7
File Format	PDF
e-ISBN	9788021448162
DOI	10.1109/MECHATRONIKA.2014.7018306
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2014-12-03
Publisher Place	Czech Republic
Access Restriction	Subscribed
Rights Holder	Brno University of Technology
Subject Keyword	Insulated gate bipolar transistors MOSFET Silicon carbide Switching losses Switching loss Switches Voltage overshoot Inverters Silicon SiC MOSFET Damping resistor Silicon-based power devices
Content Type	Text
Resource Type	Article

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