NDLI: Yield Evaluation of 10-kA/cm<formula formulatype=inline> <tex>$^{2}$</tex></formula> Nb Multi-Layer Fabrication Process Using Conventional Superconducting RAMs

Content Provider	IEEE Xplore Digital Library
Author	Nagasawa, S. Satoh, T. Hinode, K. Kitagawa, Y. Hidaka, M.
Copyright Year	2002
Abstract	To achieve larger scale and higher speed single flux quantum (SFQ) circuits, we have been developing a 10-kA/cm² Nb multi-layer fabrication process composed of more than six pla- narized Nb layers, an Nb/AlO_x /Nb junction layer, a Mo resistor layer, and SiO₂ insulator layers. To evaluate reliability of the fabrication process, we have designed superconducting random access memories (RAMs) with four different memory capacities: 256, IK, 4 K, and 16 K bits. Although the circuit configuration of these RAMs is almost the same as that of previously developed ones that have conventional latching devices, we modified the circuit parameters and layout design based on specifications of the new fabrication process. We have obtained operations for the 256-bit RAM with a bit yield of 100%, the lK-bit RAM with a bit yield of 99.8%, and the 4K-bit RAM with a bit yield of 96.7%. The number of defects in the 4K-bit RAM was estimated to be approximately 10. We confirmed that evaluations using the RAMs were effective at detecting defects due to the fabrication process.
Sponsorship	Council on Superconductivity Appl. Superconductivity Conference Inc MIT
Starting Page	177
Ending Page	180
Page Count	4
File Size	1883995
File Format	PDF
ISSN	10518223
Volume Number	17
Issue Number	2
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2007-06-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Niobium Fabrication Read-write memory Circuits Random access memory Resistors Insulation Process design Superconducting epitaxial layers Josephson junctions superconducting device fabrication planarization technique random access memories reliability
Content Type	Text
Resource Type	Article
Subject	Condensed Matter Physics Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

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4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
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