NDLI: Near-Stoichiometric Ti : LiNbO<formula formulatype=inline><tex Notation=TeX>$_{3}$</tex></formula> Strip Waveguides Fabricated by Standard Ti Diffusion and Post-VTE

Content Provider	IEEE Xplore Digital Library
Author	De-Long Zhang Ping-Rang Hua Pun, E.Y.-B.
Copyright Year	1989
Abstract	We report near-stoichiometric (NS) Ti : LiNbO₃ waveguides fabricated by indiffusion of 4-, 5-, 6-, 7-mum-wide 120-nm-thick Ti-strips at 1060degC for 10 h into a congruent LiNbO₃ (i.e., standard Ti diffusion procedure) and post-vapour-transport-equilibration (VTE) treatment at 1100degC for 5 h. These waveguides are NS and single-mode at 1.5 mum, and have a loss of 1.0/0.8 dB/cm for the TM/TE mode. In the width/depth direction of the waveguide, the mode field follows a Gauss/Hermite-Gauss profile, and the Ti profile follows a sum of two error functions/a Gauss function. The post-VTE resulted in increase of diffusion width/depth by 2.0/1.0 mum. A two-dimensional refractive index profile in the guiding layer is suggested.
Sponsorship	IEEE Lasers and Electro-Optics Society
Starting Page	1665
Ending Page	1667
Page Count	3
File Size	214079
File Format	PDF
ISSN	10411135
Volume Number	21
Issue Number	22
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2009-11-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Optical waveguides Optical surface waves Strips Surface waves Surface treatment Shape Gaussian processes Refractive index Optical materials Annealing refractive index profile Near-stoichiometric (NS) Ti : LiNbO$_{3}$ waveguide post-vapor-transport-equilibration (VTE)
Content Type	Text
Resource Type	Article
Subject	Atomic and Molecular Physics, and Optics Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

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