NDLI: Control of Plasma-Dielectric Boundary Sheath Potential for the Synthesis of Carbon Nanomaterials in Surface Wave Plasma CVD

Content Provider	IEEE Xplore Digital Library
Author	Jaeho Kim Ohsaki, H. Katsurai, M.
Copyright Year	1973
Abstract	Surface wave plasma (SWP), produced using microwave power, has attracted considerable attention for use in chemical vapor deposition (CVD) for the synthesis of carbon nanomaterials. In our previous work, a method, in which a negative direct current voltage is applied to a thin metal plate attached to the dielectric window, was reported for the reducing of plasma space potential in an SWP. Here, we demonstrate that a sheath potential >180 V, created at the plasma-dielectric boundary by the method, allows the synthesis of diamond-embedded carbon thin films even on nonpretreated silicon substrates at a gas pressure as low as 30 mTorr and a substrate temperature as low as 420 °C with a low CO concentration (2%) in H₂ gas. These results show that the control of the sheath potential at the plasma-dielectric boundary can enhance the performance of an SWP in CVD applications.
Sponsorship	IEEE Nuclear and Plasma Sciences Society
Starting Page	480
Ending Page	484
Page Count	5
File Size	1177074
File Format	PDF
ISSN	00933813
Volume Number	43
Issue Number	1
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2015-01-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Substrates Electric potential Metals Plasma temperature Surface treatment Carbon surface wave plasma (SWP). Carbon nanomaterial chemical vapor deposition (CVD) diamond microwave plasma sheath potential control surface wave plasma (SWP)
Content Type	Text
Resource Type	Article
Subject	Nuclear and High Energy Physics Condensed Matter Physics

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