NDLI: Impact of Scaling on the Performance of HfO<sub>2</sub>-Based Ferroelectric Field Effect Transistors

Content Provider	IEEE Xplore Digital Library
Author	Yurchuk, E. Muller, J. Paul, J. Schlosser, T. Martin, D. Hoffmann, R. Mueller, S. Slesazeck, S. Schroeder, U. Boschke, R. van Bentum, R. Mikolajick, T.
Copyright Year	1963
Abstract	The recently discovered ferroelectric behavior of HfO₂-based dielectrics yields the potential to overcome the main challenges of the ferroelectric field-effect transistors (FeFETs) - CMOS compatibility as well as scalability to the state-of-the-art technology nodes of logic transistors. In this paper, we study the impact of scaling on the memory performance of FeFET devices employing Si:HfO2 ferroelectric films. The operation capability was proven down to a gate length of 28 nm. Program/erase characteristics, endurance behavior, and retention properties were analyzed for FeFETs with gate lengths scaled down to 32 nm. The detected difference in the performance between the long and short channel devices could be for the most part attributed to transistor short channel effects. In addition, the effect of temperature on the device properties of Si:HfO₂-based FeFETs was investigated in detail. The program/erase speed was ascertained to be independent of temperature. On the other hand, increase in temperature resulted in reduced initial memory window accompanied by its slightly accelerated decay with time.
Sponsorship	IEEE Electron Devices Society
Starting Page	3699
Ending Page	3706
Page Count	8
File Size	1994345
File Format	PDF
ISSN	00189383
Volume Number	61
Issue Number	11
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2014-01-01
Publisher Place	U.S.A.
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Logic gates Transistors Hafnium compounds Switches Performance evaluation Temperature Charge carrier processes scaling 28-nm technology node emerging memory ferroelectric field-effect transistor (FeFET) ferroelectric transistor HfO₂ metal–ferroelectric–insulator–semiconductor FET (MFIS-FET) nonvolatile memory HfO2
Content Type	Text
Resource Type	Article
Subject	Electrical and Electronic Engineering Electronic, Optical and Magnetic Materials

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