NDLI: A Novel Metal-Ferroelectric-Insulator-Silicon FET With Selectively Nucleated Lateral Crystallized Pb(Zr,Ti)O<sub>3</sub> and ZrTiO<sub>4</sub> Buffer for Long Retention and Good Fatigue

Content Provider	IEEE Xplore Digital Library
Author	Jae Hyo Park Seung Ki Joo
Copyright Year	1980
Abstract	A novel metal-ferroelectric-insulator-silicon (MFIS) field-effect transistor (FET) with a Pt/Pb(Zr,Ti)O₃ (PZT)/ ZrTiO₄ (ZTO)/p-Si structure was fabricated and investigated for the first time. The PZT was formed by selectively nucleated lateral crystallization (SNLC), showing large rectangularlike grains (~40 μm) and smooth interface properties. An ultrathin ZTO layer showed a high dielectric constant (50), smooth interfaces in a ZTO/p-Si and PZT/ZTO layer, and an excellent interdiffusion barrier. From these material properties, the MFIS FET showed an excellent fatigue characteristic, which did not show any degradation in memory window (2.1 V), gate current density (10^-8 A/μm), and fast P/E switching speed (500 ns) even after 10¹¹ fatigue cycles. Furthermore, a long retention time, which only decreased 12.55% after 1 month and 26.97% after 10 years, was exhibited.
Sponsorship	IEEE Electron Devices Society
Starting Page	1033
Ending Page	1036
Page Count	4
File Size	554980
File Format	PDF
ISSN	07413106
Volume Number	36
Issue Number	10
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2015-01-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Fatigue Logic gates Switches Silicon Insulators Field effect transistors nonvolatile memory Metal-ferroelectric-insulator-silicon field-effect transistor (MFISFET) Pb(Zr,Ti)O3 ZrTiO4 Metal-ferroelectric-insulator-silicon field-effect transistor (MFIS-FET)
Content Type	Text
Resource Type	Article
Subject	Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

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