NDLI: Barrier height determination for n-type 4H-SiC schottky contacts made using various metals

Content Provider	SpringerLink
Author	Yakimova, R. Hemmingsson, C. Macmillan, M. F. Yakimov, T. Janzén, E.
Copyright Year	1998
Abstract	We have studied Schottky barrier contacts to n-type 4H-SiC with Cr, Mo, Ta, W, Au, and Ni. We have focused on effects of the metal work function, measurement technique and interface behavior on the Schottky barrier heights (SBHs). The contacts were prepared by metal deposition via high frequency cathodic sputtering on chemical vapor epitaxially grown epitaxial layers with low residual doping (2 × 10$^{15}$ cm$^{−3}$). Prior to deposition on Si-terminated surfaces, they were in-situ cleaned by Ar-ion sputtering for 5 and 10 min, respectively. The contacts have been characterized by means of current-voltage, capacitance-voltage (C-V), and internal photoemission (IPE) methods at room temperature. With deep level transient spectroscopy, interface deep electron traps have been detected with thermal ionization energies of 0.68, 0.77, and 1.04 eV, respectively. These traps have been attributed to structural defects formed during epitaxial growth termination. The diodes have relatively low reverse leakage current, but the ideality factor is larger than one. The SBHs have been determined from C-V and IPE measurements. It has been shown that the C-V data may contain errors resulting in a low SBH if electron deep traps are present in the interface region. In general, the SBH of various metals are influenced by the metal work function and also by the semiconductor surface preparation. The interface homogeneity is an important characteristic of the Schottky contacts, which may be improved by an optimized ion sputtering prior to metal deposition. We have considered the SBHs determined by IPE measurements as most reliable.
Starting Page	871
Ending Page	875
Page Count	5
File Format	PDF
ISSN	03615235
Journal	Journal of Electronic Materials
Volume Number	27
Issue Number	7
e-ISSN	1543186X
Language	English
Publisher	Springer-Verlag
Publisher Date	1998-01-01
Publisher Place	New York
Access Restriction	Subscribed
Subject Keyword	Capacitance-voltage (C-V) measurements deep traps Schottky barrier height (SBH) Schottky contact Optical and Electronic Materials Characterization and Evaluation of Materials Electronics and Microelectronics, Instrumentation Solid State Physics and Spectroscopy
Content Type	Text
Resource Type	Article
Subject	Condensed Matter Physics Electronic, Optical and Magnetic Materials Materials Chemistry Electrical and Electronic Engineering

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