NDLI: Structural and optical properties of CdS/Cu(In,Ga)Se$_{2}$ heterostructures irradiated by high-energy electrons*

Content Provider	SpringerLink
Author	Karotki, A. V. Mudryi, A. V. Yakushev, M. V. Luckert, F. Martin, R.
Copyright Year	2010
Abstract	Thin films of Cu(In, Ga)Se$_{2}$ (CIGS) with a Ga/(Ga + In) ratio of ~0.27 corresponding to the standard elemental composition for solar-energy transducers were grown on Mo-coated glass substrates by the Cu, In, Ga, and Se co-evaporation technique from different sources. Transmission (T), photoluminescence (PL), and photoluminescence excitation (PLE) spectra at 4.2 K were used to analyze electronic properties in the asgrown and electron-irradiated CIGS films. The band-gap energy (E$_{g}$) of the CIGS films measured using both transmission and PLE methods was found to be about 1.28 eV at 4.2 K. Two deep bands in the PL spectra of the irradiated CIGS films, P$_{1}$ at ~0.91 eV and P$_{2}$ at ~0.77 eV, have been detected. These bands are tentatively associated with copper atoms substituting indium (Cu$_{In}$) and indium vacancies V$_{In}$, respectively, as the simplest radiation-induced defects.
Starting Page	668
Ending Page	674
Page Count	7
File Format	PDF
ISSN	00219037
Journal	Journal of Applied Spectroscopy
Volume Number	77
Issue Number	5
e-ISSN	15738647
Language	English
Publisher	Springer US
Publisher Date	2010-11-12
Publisher Place	Boston
Access Restriction	Subscribed
Subject Keyword	Cu(In,Ga)Se$_{2}$ photoluminescence electron irradiation defects Analytical Chemistry Atomic/Molecular Structure and Spectra
Content Type	Text
Resource Type	Article
Subject	Spectroscopy Condensed Matter Physics

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