NDLI: Electrical Methods for Characterizing Directly Bonded Silicon/Silicon Interfaces

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Electrical Methods for Characterizing Directly Bonded Silicon/Silicon Interfaces

Content Provider	Scilit
Author	Bengtsson, Stefan Bengtsson Stefan Engström, Olof Engström Olof
Copyright Year	1991
Description	Journal: Japanese Journal of Applied Physics Measurement methods for characterizing the electrical properties of directly bonded Si/Si n-type/n-type or p-type/p-type interfaces are presented. The density of interface states in the bandgap of the semiconductor and the density of interface charge at the bonded interface are determined from measurements of current and capacitance vs applied voltage. The density of interface charge is thus obtained from two different measurements. The two measurement methods are compared and the limitations of the methods are discussed. Also, a high density of interface states at the bonded interface gives rise to a current transient when a voltage step is applied. This can be used as a qualitative estimate of the interface properties.
Related Links	http://iopscience.iop.org/article/10.1143/JJAP.30.356/pdf
ISSN	00214922
e-ISSN	13474065
DOI	10.1143/jjap.30.356
Journal	Japanese Journal of Applied Physics
Issue Number	2R
Volume Number	30
Language	English
Publisher	IOP Publishing
Publisher Date	1991-02-01
Access Restriction	Open
Subject Keyword	Journal: Japanese Journal of Applied Physics Density of Interface Interface Charge Directly Bonded Interface States
Content Type	Text
Resource Type	Article
Subject	Physics and Astronomy Engineering

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