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SiGe/Si Multi-Quantum-Well Micro-Bolometer Array Design and Fabrication with Heterogeneous Integration
Content Provider | MDPI |
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Author | Fang, Zhong He, Yong Chen, Zhequan Shi, Yunlei Jiao, Junjie Pan, Xuchao |
Copyright Year | 2021 |
Description | The micro-bolometer is important in the field of infrared imaging, although improvements in its performance have been limited by traditional materials. SiGe/Si multi-quantum-well materials (SiGe/Si MQWs) are novelty thermal-sensitive materials with a significantly high TCR and a comparably low 1/f noise. The application of such high-performance monocrystalline films in a micro-bolometer has been limited by film integration technology. This paper reports a SiGe/Si MQWs micro-bolometer fabrication with heterogeneous integration. The integration with the SiGe/Si MQWs handle wafer and dummy read-out circuit wafer was achieved based on adhesive wafer bonding. The SiGe/Si MQWs infrared-absorption structure and thermal bridge were calculated and designed. The SiGe/Si MQWs wafer and a 320 × 240 micro-bolometer array of 40 µm pitch L-type pixels were fabricated. The test results for the average absorption efficiency were more than 90% at the wavelength of 8–14 µm. The test pixel was measured to have a thermal capacity of 1.043 × $10^{−9}$ J/K, a thermal conductivity of 1.645 × $10^{−7}$ W/K, and a thermal time constant of 7.25 ms. Furthermore, the total TCR value of the text pixel was measured as 2.91%/K with a bias voltage of 0.3 V. The SiGe/Si MQWs micro-bolometer can be widely applied in commercial fields, especially in early medical diagnosis and biological detection. |
Starting Page | 1553 |
e-ISSN | 2072666X |
DOI | 10.3390/mi12121553 |
Journal | Micromachines |
Issue Number | 12 |
Volume Number | 12 |
Language | English |
Publisher | MDPI |
Publisher Date | 2021-12-13 |
Access Restriction | Open |
Subject Keyword | Micromachines Spectroscopy Sige/si Mqws Micro-bolometer Heterogeneous Integration Adhesive Bonding |
Content Type | Text |
Resource Type | Article |