NDLI: Evaluation of Si and SiC SGTOs for High Action Army Applications

Content Provider	IEEE Xplore Digital Library
Author	O'Brien, H. Shaheen, W. Chiscop, V. Scozzie, C.J. Koebke, M.G.
Copyright Year	2008
Description	Author affiliation: Res. Lab., U.S. Army, Adelphi, MD (O'Brien, H.)
Abstract	The U. S. Army Research Laboratory (ARL) has been exploring silicon and silicon carbide Super gate turn-off thyristors (SGTOs) for high power pulse switching required by Army survivability and lethality applications. Silicon SGTOs (3.5 $cm^{2})$ were pulsed at 5 kA with a half-sine current waveform measuring 1 ms at the base. The recovery time, or $T_{q},$ of the devices was evaluated from the point at which the main current pulse fell to zero. Using a driver designed to provide both turn-on and turn-off signals, the $T_{q}$ was reduced to 10 mus. Smaller silicon carbide SGTOs (0.16 $cm^{2})$ were similarly evaluated for wide-pulse performance. They were switched several times at a peak current above 300 A, with an unassisted $T_{q}$ time of 30 mus. This paper provides details of the aforementioned pulse switching, as well as a description of continuing evaluations involving parallel devices and larger test beds.
Starting Page	1
Ending Page	6
File Size	776717
Page Count	6
File Format	PDF
ISBN	9781424418329
DOI	10.1109/ELT.2008.38
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2008-06-10
Publisher Place	Canada
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Silicon carbide Switches Logic gates Silicon Anodes Cathodes Driver circuits
Content Type	Text
Resource Type	Article

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1	Ministry of Education (GoI), Department of Higher Education	Sanctioning Authority	https://www.education.gov.in/ict-initiatives
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4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
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