NDLI: Evaluation of on-state voltage VCE(ON) and threshold voltage Vth for real-time health monitoring of IGBT power modules

Content Provider	IEEE Xplore Digital Library
Author	Eleffendi, M.A. Johnson, C.M.
Copyright Year	2015
Description	Author affiliation: Sch. of Electr. & Electron. Eng., Univ. Of Nottingham, Nottingham, UK (Eleffendi, M.A.; Johnson, C.M.)
Abstract	This paper investigates by experiment and simulation the use of the real-time measurements of on-state voltage $V_{CE(ON)}$ and threshold voltage $V_{th}$ for real-time health monitoring of IGBT power modules. A study of the dependencies of each parameter on temperature, wear-out mechanisms and operating conditions is presented. Online measurement circuits are developed to obtain these two parameters during the normal operation of power converters. Junction temperature estimation for health monitoring is implemented using $V_{th}$ which is a thermo-sensitive electrical parameter. The data of $V_{CE(ON)},$ $V_{th}$ and $T_{J}$ are combined in a residual-based health monitoring framework which allows the discrimination between two dominant failure mechanisms of power modules: wire-bond lift-off and solder fatigue.
Starting Page	1
Ending Page	10
File Size	841263
Page Count	10
File Format	PDF
e-ISBN	9789075815221
DOI	10.1109/EPE.2015.7309265
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2015-09-08
Publisher Place	Switzerland
Access Restriction	Subscribed
Rights Holder	EPE Association and IEEE
Subject Keyword	Insulated gate bipolar transistors Measurement Temperature Voltage measurement Condition Monitoring Junction Temperature Estimation Technique Temperature measurement IGBT Current measurement Threshold voltage Thermo-Sensitive Electrical Parameters Reliability Monitoring
Content Type	Text
Resource Type	Article

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