NDLI: A multi-physics model of the VJFET with a lateral channel

Content Provider	IEEE Xplore Digital Library
Author	Herve, M. Youness, H. Dominique, T. Remi, R. Fabien, D. Damien, R. Christian, M. Dominique, B. Cyril, B. Regis, M.
Copyright Year	2011
Description	Author affiliation: Hispano-Suiza, Safran Group, Réau, France (Regis, M.) \|\| Université de Lyon, UCBL, Lab. Ampere, Villeurbanne, France (Christian, M.; Dominique, B.) \|\| Université de Lyon, INSA Lyon, Lab. Ampere, Bât. Léonard de Vinci - INSA Lyon, 21, avenue Jean Capelle, Villeurbanne, France (Herve, M.; Youness, H.; Dominique, T.; Remi, R.; Fabien, D.; Damien, R.; Cyril, B.)
Abstract	A multi-physics model of the VJFET with a lateral channel is presented. The model has been implemented and tested in SABER using the MAST language. The model includes an asymmetric representation of the lateral channel which is the main contribution of the paper. The blocking condition is not so obvious and it is presented in details. Each junction of the structure is represented as a Shockley pn-junction model in parallel with the associated junction capacitance. The comparison between simulations and experiments yields to satisfying results, both in static and dynamic conditions. The analysis of the remaining difficulties to be solved is given.
Starting Page	1
Ending Page	10
File Size	699604
Page Count	10
File Format	PDF
ISBN	9781612841670
e-ISBN	9789075815146
e-ISBN	9789075815153
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2011-08-30
Publisher Place	United Kingdom
Access Restriction	Subscribed
Rights Holder	EPE ASSOCIATION
Subject Keyword	Semiconductor device modeling Silicon carbide Power semiconductor device Logic gates Device characterisation Capacitance JFET JFETs Mathematical model Junctions Silicon Carbide (SiC) Device modeling
Content Type	Text
Resource Type	Article

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4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
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