NDLI: Non uniform meander based low actuation voltage high capacitance ratio RF MEMS shunt capacitive switch

Content Provider	IEEE Xplore Digital Library
Author	Guha, K. Kumar, M. Parmar, A. Baishya, S.
Copyright Year	2014
Description	Author affiliation: Dept. of Electron. & Commun. Eng., Nat. Inst. of Technol., Silchar, India (Guha, K.; Kumar, M.; Parmar, A.; Baishya, S.)
Abstract	This paper deals with the investigation of high $C_{on}$ $C_{off}$ ratio capacitive shunt RF MEMS switch and reports a detailed comparison between uniform three meander beam with non-uniform single meander beam RF MEMS switch. RF MEMS Switches are designed for operation in the range 5 -40 GHz. Static Pull in analysis is performed with gold as a beam material. Simulation reveals that use of high K dielectric material can drastically improve the capacitance ratio of switch. For the same geometry, pull in voltage is 2.45 V for $HfO_{2},$ 2.7 V for $Si_{3}N_{4}$ and Capacitive Ratio of the switch with $Si_{3}N_{4}$ is 83.75 and Capacitive Ratio with $HfO_{2}$ is 223 at $2g_{0}$ (air gap) and 0.8 μm thickness of beam. The Radio Frequency performance of RF MEMS switch is obtained by scattering parameters analysis (insertion loss, return loss and isolation loss) which are mainly dominated by down to up capacitance ratio and MEMS bridge geometries. RF analysis shows that insertion loss as low as -0.4 dB at 20 GHz and isolation as high as -60 dB at 20 GHz can be achieved. Investigation of uniform three meander design and non-uniform single meander design reveals that use of non-uniform design reduces the design complexity and saves substrate area while maintaining almost same device performance. S-parameter analysis is carried out to compare device performance for both structures. DC analysis and beam deflection analysis of the proposed switch is carried out using FEM Coventorware and RF analysis is plotted in MATLAB.
Starting Page	120
Ending Page	123
File Size	1259752
Page Count	4
File Format	PDF
ISBN	9781479980604
DOI	10.1109/NMDC.2014.6997437
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2014-10-12
Publisher Place	Italy
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Non uniform meander Actuation Voltage Capacitance Ratio Switches Dielectrics 1 non-uniform Meander structure Capacitive Shunt Switch Switching circuits Micromechanical devices Radio frequency 3uniform Meander structure Capacitance Springs
Content Type	Text
Resource Type	Article

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