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Content Provider | IEEE Xplore Digital Library |
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Author | Phansathitwong, K. Sjöland, H. Andreani, P. |
Copyright Year | 2010 |
Description | Author affiliation: Dept. of Electrical and Information Technology, Lund University, SE-222 10, Sweden (Phansathitwong, K.; Sjöland, H.; Andreani, P.) |
Abstract | A Multi-band CMOS front-end was designed and fabricated in a 0.13µm CMOS process. The front-end employs a common-gate low noise amplifier (LNA) with capacitive cross coupling (CCC) technique and a double balanced mixer. The band selection is performed by switching capacitors in and out of the LNA load, changing the resonance frequencies ranging from 2.5GHz to 4.5GHz in 16 different frequency bands. The measured noise figure is from 2.8dB in the higher bands to 4dB in lower bands. The conversion gain ranges from 20dB in the higher bands down to 14.5dB in the lower bands, and the third order intercept point (IIP3) is above −14dBm. The input matching S11 is well below −10dB at all frequencies. The front-end draws 3.85mA from a 1.2V power supply. |
Starting Page | 1 |
Ending Page | 4 |
File Size | 120383 |
Page Count | 4 |
File Format | |
ISBN | 9781424479054 |
e-ISBN | 9783981375404 |
Language | English |
Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
Publisher Date | 2010-07-18 |
Publisher Place | Germany |
Access Restriction | Subscribed |
Rights Holder | VDE |
Subject Keyword | capacitive cross coupling Noise Capacitors Logic gates mixer CMOS integrated circuits Frequency measurement multi-band Transistors Mixers LNA |
Content Type | Text |
Resource Type | Article |
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