NDLI: Performance evaluation of air-gap-based coaxial RF TSV for 3D NoC

Content Provider	IEEE Xplore Digital Library
Author	Le Yu Haigang Yang Jia Zhang Wei Wang
Copyright Year	2011
Description	Author affiliation: Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100190, China (Wei Wang) \|\| Institute of Electronics, Chinese Academy of Sciences, China (Le Yu; Haigang Yang; Jia Zhang)
Abstract	In this paper, a novel air-gap-based coaxial Through Silicon Via (TSV) was proposed for on-chip RF interconnect, to fill up the increasing bandwidth gap between the demand and supply according for the 2007 International Technology Roadmap for Semiconductors. Based on earlier work, the expressions of characteristic impedance, attenuation and bandwidth have been proposed. Consequently, we assume an 80 multi-core 3D Network-on-Chip (NoC) system with Binary Phase Shift Keying (BPSK) modulation, to evaluate energy per bit and area per Gbps of the proposed air-gap-based coaxial TSV. The result indicates that the energy dissipation and area consumption of the proposed one are 40∼50% and 10% better than the conventional dielectric RF TSV.
Starting Page	94
Ending Page	97
File Size	1080923
Page Count	4
File Format	PDF
ISBN	9781457701719
e-ISBN	9781457701702
e-ISBN	9781457701696
DOI	10.1109/VLSISoC.2011.6081658
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2011-10-03
Publisher Place	Hong Kong
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Binary Phase Shift Keying (BPSK) three dimensional (3D) Air gaps Binary phase shift keying through-silicon via (TSV) Radio frequency coaxial air-gap Bandwidth radio frequency (RF) Three dimensional displays Copper Through-silicon vias
Content Type	Text
Resource Type	Article

Sl.	Authority	Responsibilities	Communication Details
1	Ministry of Education (GoI), Department of Higher Education	Sanctioning Authority	https://www.education.gov.in/ict-initiatives
2	Indian Institute of Technology Kharagpur	Host Institute of the Project: The host institute of the project is responsible for providing infrastructure support and hosting the project	https://www.iitkgp.ac.in
3	National Digital Library of India Office, Indian Institute of Technology Kharagpur	The administrative and infrastructural headquarters of the project	Dr. B. Sutradhar bsutra@ndl.gov.in
4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
5	Website/Portal (Helpdesk)	Queries regarding NDLI and its services	support@ndl.gov.in
6	Contents and Copyright Issues	Queries related to content curation and copyright issues	content@ndl.gov.in
7	National Digital Library of India Club (NDLI Club)	Queries related to NDLI Club formation, support, user awareness program, seminar/symposium, collaboration, social media, promotion, and outreach	clubsupport@ndl.gov.in
8	Digital Preservation Centre (DPC)	Assistance with digitizing and archiving copyright-free printed books	dpc@ndl.gov.in
9	IDR Setup or Support	Queries related to establishment and support of Institutional Digital Repository (IDR) and IDR workshops	idr@ndl.gov.in

Performance comparison between air-gap based coaxial TSV and conventional circular TSV in 3D-ICs

Process and RF modelling of TSV last approach for 3D RF interposer

A silicon platform with Through-silicon vias for heterogeneous RF 3D modules

A silicon platform with Through-silicon vias for heterogeneous RF 3D modules

RF Characterization and Analytical Modelling of Through Silicon Vias and Coplanar Waveguides for 3D Integration

Comprehensive study for RF interference limited 3D TSV optimization

High-frequency through-silicon Via (TSV) failure analysis

RF characterization and modeling of through-silicon vias

Through Silicon Via technology using tungsten metallization

Performance evaluation of air-gap-based coaxial RF TSV for 3D NoC

Similar Documents

Performance comparison between air-gap based coaxial TSV and conventional circular TSV in 3D-ICs

Process and RF modelling of TSV last approach for 3D RF interposer

A silicon platform with Through-silicon vias for heterogeneous RF 3D modules

A silicon platform with Through-silicon vias for heterogeneous RF 3D modules

RF Characterization and Analytical Modelling of Through Silicon Vias and Coplanar Waveguides for 3D Integration

Comprehensive study for RF interference limited 3D TSV optimization

High-frequency through-silicon Via (TSV) failure analysis

RF characterization and modeling of through-silicon vias

Through Silicon Via technology using tungsten metallization

Performance evaluation of air-gap-based coaxial RF TSV for 3D NoC