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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Driad, R. Schneider, K. Makon, R.E. Lang, M. Nowotny, U. Aidam, R. Quay, R. Schlechtweg, M. Mikulla, M. Weimann, G. |
| Copyright Year | 2005 |
| Description | Author affiliation: Fraunhofer Inst. of Appl. Solid State Phys., Freiburg, Germany (Driad, R.; Schneider, K.; Makon, R.E.; Lang, M.; Nowotny, U.; Aidam, R.; Quay, R.; Schlechtweg, M.; Mikulla, M.; Weimann, G.) |
| Abstract | In this paper, we report the achieved performance of devices and integrated circuits (ICs) using a manufacturable InP DHBT-based technology. High speed MBE grown InGaAs/InP DHBTs with an effective emitter junction area of 4.8 /spl mu/m/sup 2/ exhibited peak f/sub T/ and f/sub MAX/ values of 265 and 305 GHz, respectively, at a collector current density of 3.75 mA//spl mu/m/sup 2/. Using this technology, a set of basic analog and digital IC building blocks, including lumped amplifiers, voltage controlled oscillators, multiplexers and demultiplexers, suitable for operation at 40 Gb/s and beyond, have been successfully designed and fabricated. |
| Starting Page | 137 |
| Ending Page | 140 |
| File Size | 546872 |
| Page Count | 4 |
| File Format | |
| ISBN | 8890201207 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2005-10-03 |
| Publisher Place | France |
| Access Restriction | Subscribed |
| Rights Holder | EUROPEAN MICROWAVE ASSOCIATION |
| Subject Keyword | Integrated circuit technology Integrated circuit manufacture Double heterojunction bipolar transistors DH-HEMTs Pulp manufacturing Indium gallium arsenide High speed integrated circuits Data communication Current density Indium phosphide |
| Content Type | Text |
| Resource Type | Article |
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