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Content Provider | IEEE Xplore Digital Library |
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Author | Hara, M. Yokoyama, T. Sakashita, T. Ueda, M. Satoh, Y. |
Copyright Year | 2009 |
Description | Author affiliation: FUJITSU LIMITED, 64 Nishiwaki, Ohkubo-cho, Akashi 674-8555, Japan (Hara, M.; Yokoyama, T.; Sakashita, T.; Ueda, M.; Satoh, Y.) |
Abstract | The first K to Ka band filters using thin film bulk acoustic resonators (FBARs) have been developed. The filters are ladder type filters configured with air-gap type FBARs and designed using an equivalent circuit based on a Butterworth-Van-Dyke (BVD) model. Center frequency, fractional bandwidth, minimum insertion loss and suppression in out-band were 23.8 GHz, 3.4%, −3.8 dB and −13 dB in the K band filter, and were 29.2 GHz, 3.4%, −3.8 dB and −11 dB in the Ka band filter, respectively. 24.7 GHz in resonant frequency, 285 in resonant Q, 291 in anti-resonant Q and 6.0% in effective electro-mechanical coupling coefficient $k^{2}$ were obtained in the K band FBAR. Additionally, it was derived and verified experimentally that the loss is proportional to the product of the resonant frequency and the capacitance ratio in the FBAR. This relation allowed the limitation of the FBAR filter to be discussed for higher frequencies. |
Starting Page | 851 |
Ending Page | 854 |
File Size | 1110223 |
Page Count | 4 |
File Format | |
ISBN | 9781424443895 |
ISSN | 19485727 |
DOI | 10.1109/ULTSYM.2009.5441576 |
Language | English |
Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
Publisher Date | 2009-09-20 |
Publisher Place | Italy |
Access Restriction | Subscribed |
Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
Subject Keyword | Transistors Resonator filters Film bulk acoustic resonators Thin film circuits Resonant frequency Air gaps Equivalent circuits Bandwidth Insertion loss Resonance FBAR component K band Ka band |
Content Type | Text |
Resource Type | Article |
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