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Content Provider | IEEE Xplore Digital Library |
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Author | Zhebin Wang Chan-Wang Park |
Copyright Year | 2013 |
Description | Author affiliation: Electr. Eng., Univ. du Quebec a Rimouski, Rimouski, QC, Canada (Zhebin Wang; Chan-Wang Park) |
Abstract | In this paper, a novel half mode substrate integrated waveguide (HMSIW) 10W power amplifier (PA) designed with HMSIW matching network (MN) is presented for the first time. The HMSIW-based matching network (MN) is designed with microstrip-to-HMSIW transition and an inductive metalized post in HMSIW. The impedance matching for the fundamental frequency 2.14 GHz is realized by moving the position of the inductive metalized post in the HMSIW. Both the input and output MNs are designed with the proposed HMSIW-based MN concept. One HMSIW-based 10W PA using GaN HEMT at 2.14 GHz is designed, fabricated, and measured. The proposed HMSIW-based PA can be easily connected with any microstrip or SIW-based circuit. Measured results show that the maximum power added efficiency (PAE) is 72.2 % with 40.7 dBm output power and the maximum gain is 20.1 dB. At the design frequency of 2.14 GHz, the size of the proposed HMSIW-based PA is comparable with other microstrip-based PAs. |
Starting Page | 1 |
Ending Page | 3 |
File Size | 923808 |
Page Count | 3 |
File Format | |
ISBN | 9781467355360 |
e-ISBN | 9781467355377 |
e-ISBN | 9781467355353 |
DOI | 10.1109/WAMICON.2013.6572749 |
Language | English |
Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
Publisher Date | 2013-04-07 |
Publisher Place | USA |
Access Restriction | Subscribed |
Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
Subject Keyword | Microstrip Manganese HEMTs Capacitors power added efficiency (PAE) GaN HEMT half mode substrate integrated waveguide (HMSIW) matching network (MN) power amplifier (PA) |
Content Type | Text |
Resource Type | Article |
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