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Content Provider | IEEE Xplore Digital Library |
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Author | Steinbeiser, C. Landon, T. Suckling, C. |
Copyright Year | 2007 |
Description | Author affiliation: TriQuint Semicond., Richardson (Steinbeiser, C.; Landon, T.; Suckling, C.) |
Abstract | A 2-way symmetrical Doherty amplifier exhibiting 250 W saturated power has been developed using High-Voltage HBT (HVHBT) GaAs technology biased at 28 V on the Collector. Greater than 57% collector efficiency at 50W (47dBm) average output power has been demonstrated while achieving -55dBc linearized ACPR at 5 MHz offset using a 2-carrier-side-by-side WCDMA input signal with 6.5dB peak to average ratio measured at .01% probability on the CCDF. At this condition, the measured overall power-added efficiency is 53%. The HVHBT Doherty exhibits 200W (53dBm) PldBat 70% efficiency with 57% efficiency at 6dB output back-off (OBO) from PldB showing a 25 percentage point improvement over class AB operation. |
Starting Page | 1 |
Ending Page | 4 |
File Size | 393112 |
Page Count | 4 |
File Format | |
ISBN | 9781424410224 |
DOI | 10.1109/CSICS07.2007.16 |
Language | English |
Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
Publisher Date | 2007-10-14 |
Publisher Place | USA |
Access Restriction | Subscribed |
Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
Subject Keyword | Multiaccess communication Power amplifiers Radiofrequency amplifiers Gallium arsenide Heterojunction bipolar transistors Radio frequency Peak to average power ratio High power amplifiers Power generation Power measurement |
Content Type | Text |
Resource Type | Article |
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