NDLI: 28V planar GaAs MESFETs for wireless base-station power amplifiers

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Welcome to the 2005 IEEE CSIC Symposium

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Table of contents

Challenges and opportunities for compound semiconductor devices in next generation wireless base station power amplifiers

The future of compound semiconductors for aerospace and defense applications

Trusted foundry: the path to advanced SiGe technology

The wide and the narrow: DARPA/MTO programs for RF applications in wide bandgap and antimonide-based semiconductors

Opportunities and challenges of III-V nanoelectronics for future high-speed, low-power logic applications

Automotive radar - status and perspectives

High-speed InP-based Mach-Zehnder modulators for telecom applications

A packaged 43-Gb/s clock and data recovery IC

A frequency agile 40 Gb/s half rate linear phase detector for data jitter measurement

A 1-tap 40-Gbps look-ahead decision feedback equalizer in 0.18 /spl mu/m SiGe BiCMOS technology

A novel 50-Gbit/s NRZ-RZ converter with retiming function using InP HEMT technology

Fully integrated millimeter-wave CMOS phased arrays

X-band low noise amplifier using SiGe BiCMOS technology

A X-band 4-bit mHEMT phase shifter

Critical issues in highly-linear power amplifier design

300 GHz InP DHBT large signal model including current blocking effect and validated by Gilbert multiplier circuits

Characterization and modeling of thermal effects in sub-micron InP DHBTs

GaAsSb DHBT IC technology for RF and microwave instrumentation

Affordable electronically scanned apertures through heterogeneous integration

Highly uniform AlGaN/GaN power HEMT on a 3-inch conductive N-SiC substrate for wireless base station application

A low phase noise InGaP-GaAs HBT transformer power combining VCO

A 2/spl mu/m InGaP/GaAs HBT matrix amplifier with 15dB gain and 41GHz bandwidth

50% PAE WCDMA basestation amplifier implemented with GaN HFETs

Improved efficiency, IP3-bandwidth and robustness of a microwave Darlington amplifier using 0.5/spl mu/m ED PHEMT and a new circuit topology

Resonant tunneling diodes and their application to high-speed circuits

A 40-G samples/sec track & hold amplifier in 0.18/spl mu/m SiGe BiCMOS technology

A 5-bit, 18 GS/sec SiGe HBT track-and-hold amplifier

60 GHz circuits in SiGe HBT technology

The role of doping profile on power gain of SiGe HBTs under constant Ge strain

Collector optimization in advanced SiGe HBT technologies

Scalability of SOI CMOS technology and circuit to millimeter wave performance

Direct digital synthesis for enabling next generation RF systems

Ultra wideband digital to analog conversion based on advanced InP DHBT technology

A low-power 6GS/s track and hold circuit implemented with antimonide based compound semiconductor HBTs

Physics of GaN-based heterostructure field effect transistors

Numerical analysis of pulsed I-V curves and current collapse in GaN FETs as affected by buffer trapping

Temperature behavior of AlGaN/GaN on SiC HEMTs

Non-uniform stress effects in GaN based heterojunction field effect transistors

A high efficiency linear power amplifier for portable communications applications

A GaAs HBT programmable linear power amplifier

An EVM-optimized power amplifier for 2.4-GHz WLAN application

High-efficiency class-E power amplifier using field-plated GaN HEMTs

Field-plated GaN HEMTs and amplifiers

GaN MMIC technology for microwave and millimeter-wave applications

High-temperature power performance of X-band recessed-gate AlGaN/GaN HEMTs

Electrical and optical transceivers for short-range data communication, fabricated in VLSI 90-nm bulk and SOI CMOS technology

Bandwidth efficient modulation over fiber optics

A low power 10 Gb/s serial link transmitter in 90-nm CMOS

A 60 mW per lane, 4 /spl times/ 23-Gb/s 2/sup 7/ PRBS generator

A broadband 44-GHz frequency divider in 90-nm CMOS

The state-of-the-art of silicon-on-sapphire CMOS RF switches

MMIC-oscillator designs for ultra low phase noise

High-power submicron InP D-HBT push-push oscillators operating up to 215 GHz

A broadband millimetre-wave differential pHEMT frequency doubler MMIC

Custom GaAs and InP components for radio astronomy

An indium phosphide X-band class-E power MMIC with 40% bandwidth

A family of 1, 2 and 4-watt power amplifier MMICs for cost effective VSAT ground terminals

A highly efficient Q-band MMIC 2.8 Watt output power amplifier based on 0.15/spl mu/m InGaAs/GaAs pHEMT process technology

Ka-band MMIC high power amplifier (4W at 30GHz) with record compact size

Design, performance and application of high voltage GaAs FETs

Power dependent input impedance of field plate MESFETs

28V planar GaAs MESFETs for wireless base-station power amplifiers

Reliability model for predicting long-term DC/RF performance in GaAs PHEMTs

Circuit design considerations for 100 GHz clock rates

Digital ICs for high data rate/high voltage swing applications in a production-near SiGe technology

A 165-Gb/s 4:1 multiplexer in InP DHBT technology

Up to 80-Gbit/s operations of 1:4 demultiplexer IC with InP HBTs

80 Gbit/s monolithically integrated clock and data recovery circuit with 1:2 DEMUX using InP-based DHBTs

On the road to ESD safe GaAs HBT MMICs

ESD protection for pHEMT MMIC amplifiers

A simple method for the gain improvement of matrix distributed amplifiers

Design methodology and applications of SiGe BiCMOS cascode opamps with up to 37-GHz unity gain bandwidth

A low-noise amplifier at 77 GHz in SiGe:C bipolar technology

110-GHz static frequency divider in SiGe bipolar technology

High dynamic range multibit /spl Sigma//spl Delta/ ADC based receiver prototype employing dynamic error correction

An InP-based OEIC for optical arbitrary waveform generation

IEEE Compound Semiconductor Integrated Circuit Symposium, 2004.

28V planar GaAs MESFETs for wireless base-station power amplifiers

Content Provider	IEEE Xplore Digital Library
Author	Yang, B. Halder, S. Ye, P.D. Daum, G. Dai, W. Frei, M. Ng, K. Bude, J. Hwang, J.C.M. Wilk, G.
Copyright Year	2005
Description	Author affiliation: Agere Syst., Allentown, PA, USA (Yang, B.)
Abstract	This paper reports DC and RF characteristics of a high-voltage planar GaAs MESFET. Its breakdown voltages are over 65V at off state (V/sub gs/ = -1.5V) and 30V at on state (V/sub gs/ = 0.5 V). Under 28 V drain bias and 1.9GHz input, the power density reaches 1.0 W/mm with greater than 14dB linear gain. The third-order intermodulation product is -34dBc with 1dB back off from 1dB gain compression. These results suggest that the planar GaAs MESFET may be used as high-power and high-linearity RF power amplifiers in wireless base stations. The planar structure also makes it highly suitable for low-cost mass production.
File Size	221099
File Format	PDF
ISBN	0780392507
DOI	10.1109/CSICS.2005.1531827
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2005-10-30
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Gallium arsenide MESFETs Power amplifiers Substrates Gold High power amplifiers FETs Fabrication Radio frequency Radiofrequency amplifiers
Content Type	Text
Resource Type	Article

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