NDLI: 1.3-um InAs/GaAs quantum-dot lasers monolithically grown on Ge substrate

Content Provider	IEEE Xplore Digital Library
Author	Ting Wang Tutu, F. Pozzi, F. Seeds, A. Huiyun Liu
Copyright Year	2011
Description	Author affiliation: Department of Electronic and Electrical Engineering, University College London, UK (Ting Wang; Tutu, F.; Pozzi, F.; Seeds, A.; Huiyun Liu)
Abstract	The realization of semiconductor laser diodes and light-emitting diodes on Si substrates would permit the creation of complex optoelectronic circuits for the first time, enabling chip-to-chip and system-to-system optical communications. Direct epitaxial growth of III-V semiconductor materials on Si or Ge is one of the most promising $candidates^{1}$ for fabricating electrically pumped light sources on a Si platform. Here, we describe the first quantum-dot laser diode to be realized on a Ge substrate. To fabricate the laser, a single-domain GaAs buffer $layer^{2}$ was first grown on the Ge substrate using the Ga prelayer technique. A long-wavelength InAs/GaAs quantum-dot structure was then fabricated on the high-quality GaAs buffer layer. Lasing at a wavelength of 1305 nm with the extremely low threshold current density of 55.2 A/cm2 was observed under continuous-wave (CW) current drive at room temperature
Starting Page	240
Ending Page	242
File Size	533338
Page Count	3
File Format	PDF
ISBN	9781424483389
ISSN	19492081
e-ISBN	9781424483402
DOI	10.1109/GROUP4.2011.6053776
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2011-09-14
Publisher Place	United Kingdom
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Gallium arsenide Substrates Quantum dot lasers Silicon Temperature Indium gallium arsenide
Content Type	Text
Resource Type	Article

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