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Content Provider | IEEE Xplore Digital Library |
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Author | Barton, D.L. Zeller, J. Phillips, B.S. Pei-Chih Chiu Askar, S. Dong-Seung Lee Osinski, M. Malloy, K.J. |
Copyright Year | 1995 |
Description | Author affiliation: Sandia Nat. Labs., Albuquerque, NM, USA (Barton, D.L.) |
Abstract | Short-wavelength, visible-light emitting optoelectronic devices are needed for a wide range of commercial applications, including high-density optical data storage, full-color displays, and underwater communications. In 1994, high-brightness blue LEDs based on gallium nitride and related compounds (InGaN/AlGaN) were introduced by Nichia Chemical Industries. The Nichia diodes are 100 times brighter than the previously available SiC blue LEDs. Group-III nitrides combine a wide, direct bandgap with refractory properties and high physical strength. So far, no studies of degradation of GaN based LEDs have been reported. Our study, reported in this paper, focuses on the performance of GaN LEDs under high electrical stress conditions. Our observations indicate that, in spite of a high defect density, which normally would have be fatal to other III-V devices, defects in group-III nitrides are not mobile even under high electrical stress. Defect tubes, however, can offer a preferential path for contact metals to electromigrate towards the p-n junction, eventually resulting in a short. The proposed mechanism of GaN diode degradation raises concern for prospects of reliable lasers in the group-III nitrides grown on sapphire. |
Starting Page | 191 |
Ending Page | 199 |
File Size | 2151986 |
Page Count | 9 |
File Format | |
ISBN | 078032031X |
DOI | 10.1109/RELPHY.1995.513674 |
Language | English |
Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
Publisher Date | 1995-04-04 |
Access Restriction | Subscribed |
Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
Subject Keyword | Degradation Aluminum gallium nitride Gallium nitride Light emitting diodes III-V semiconductor materials Stress Optoelectronic devices Stimulated emission Optical devices Optical refraction |
Content Type | Text |
Resource Type | Article |
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