NDLI: Prognostics approach for power MOSFET under thermal-stress aging

Content Provider	IEEE Xplore Digital Library
Author	Celaya, J.R. Saxena, A. Kulkarni, C.S. Saha, S. Goebel, K.
Copyright Year	2012
Description	Author affiliation: ISIS, Vanderbilt University, 1025 16th Avenue, Nashville, TN, 37212, USA (Kulkarni, C.S.) \|\| NASA Ames Research Center (MCT), Prognostics Center of Excellence, MS 269-4, Moffett Field, CA 94035, USA (Saha, S.) \|\| NASA Ames Research Center (SGT Inc.), Prognostics Center of Excellence, MS 269-4, Moffett Field, CA 94035, USA (Celaya, J.R.; Saxena, A.) \|\| NASA Ames Research Center, Prognostics Center of Excellence, MS 269-1, Moffett Field, CA 94035, USA (Goebel, K.)
Abstract	The prognostic technique for a power MOSFET presented in this paper is based on accelerated aging of MOSFET IRF520Npbf in a TO-220 package. The methodology utilizes thermal and power cycling to accelerate the life of the devices. The major failure mechanism for the stress conditions is die-attachment degradation, typical for discrete devices with lead-free solder die attachment. It has been determined that die-attach degradation results in an increase in ON-state resistance due to its dependence on junction temperature. Increasing resistance, thus, can be used as a precursor of failure for the die-attach failure mechanism under thermal stress. A feature based on normalized ON-resistance is computed from in-situ measurements of the electro-thermal response. An Extended Kalman filter is used as a model-based prognostics techniques based on the Bayesian tracking framework. The proposed prognostics technique reports on preliminary work that serves as a case study on the prediction of remaining life of power MOSFETs and builds upon the work presented in [1]. The algorithm considered in this study had been used as prognostics algorithm in different applications and is regarded as suitable candidate for component level prognostics. This work attempts to further the validation of such algorithm by presenting it with real degradation data including measurements from real sensors, which include all the complications (noise, bias, etc.) that are regularly not captured on simulated degradation data. The algorithm is developed and tested on the accelerated aging test timescale. In real world operation, the timescale of the degradation process and therefore the RUL predictions will be considerable larger. It is hypothesized that even though the timescale will be larger, it remains constant through the degradation process and the algorithm and model would still apply under the slower degradation process. By using accelerated aging data with actual device measurements and real sensors (no simulated behavior), we are attempting to assess how such algorithm behaves under realistic conditions.
Starting Page	1
Ending Page	6
File Size	702799
Page Count	6
File Format	PDF
ISBN	9781457718496
ISSN	0149144X
e-ISBN	9781457718519
DOI	10.1109/RAMS.2012.6175487
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2012-01-23
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Degradation Mathematical model Power MOSFET Accelerated aging Prediction algorithms Temperature measurement Accelerated Life Test Prognostics PHM
Content Type	Text
Resource Type	Article

Sl.	Authority	Responsibilities	Communication Details
1	Ministry of Education (GoI), Department of Higher Education	Sanctioning Authority	https://www.education.gov.in/ict-initiatives
2	Indian Institute of Technology Kharagpur	Host Institute of the Project: The host institute of the project is responsible for providing infrastructure support and hosting the project	https://www.iitkgp.ac.in
3	National Digital Library of India Office, Indian Institute of Technology Kharagpur	The administrative and infrastructural headquarters of the project	Dr. B. Sutradhar bsutra@ndl.gov.in
4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
5	Website/Portal (Helpdesk)	Queries regarding NDLI and its services	support@ndl.gov.in
6	Contents and Copyright Issues	Queries related to content curation and copyright issues	content@ndl.gov.in
7	National Digital Libarray of India Club (NDLI Club)	Queries related to NDLI Club formation, support, user awareness program, seminar/symposium, collaboration, social media, promotion, and outreach	clubsupport@ndl.gov.in
8	Digital Preservation Centre (DPC)	Assistance with digitizing and archiving copyright-free printed books	dpc@ndl.gov.in
9	IDR Setup or Support	Queries related to establishment and support of Institutional Digital Repository (IDR) and IDR workshops	idr@ndl.gov.in

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