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Content Provider | IEEE Xplore Digital Library |
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Author | Han-Soo Kim Jae-Hyung Kim Byeong-Hoon Lee Min-Koo Han Seung Youp Han Yearn-Ik Choi Sang-Koo Chung |
Copyright Year | 1995 |
Description | Author affiliation: Dept. of Electr. Eng., Seoul Nat. Univ., South Korea (Han-Soo Kim; Jae-Hyung Kim; Byeong-Hoon Lee; Min-Koo Han; Seung Youp Han) |
Abstract | A Hybrid Schottky INjector Field Effect Transistor (HSINFET) which increases the forward conduction current without sacrificing the latch-up capability and turn-off characteristics, is proposed. The feature of the structure is that the hybrid Schottky injector is implemented by the trench sidewall Schottky contact and p-n junction injector at the bottom of a trench. The device characteristics of the proposed HSINFET are numerically simulated and compared with conventional devices. The proposed HSINFET exhibits a lower forward voltage drop than the conventional HSINFET by 0.4 V at 100 A/cm/sup 2/. |
Starting Page | 247 |
Ending Page | 251 |
File Size | 387672 |
Page Count | 5 |
File Format | |
ISBN | 0780326180 |
ISSN | 10636854 |
DOI | 10.1109/ISPSD.1995.515043 |
Language | English |
Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
Publisher Date | 1995-05-23 |
Access Restriction | Subscribed |
Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
Subject Keyword | Anodes P-n junctions Schottky barriers Voltage Electrodes FETs Numerical simulation Schottky diodes Insulated gate bipolar transistors Power integrated circuits |
Content Type | Text |
Resource Type | Article |
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