NDLI: Improvement of CMOS-MEMS accelerometer using post-CMOS selective electroplating technique

Content Provider	IEEE Xplore Digital Library
Author	Yu-Chia Liu Ming-Han Tsai Tsung-Lin Tang Weileun Fang
Copyright Year	2011
Description	Author affiliation: Dept. of Power Mechanical Engineering, National Tsing Hua University, Hsinchu, Taiwan (Tsung-Lin Tang) \|\| Inst. of NanoEngineering and MicroSystems, National Tsing Hua University, Hsinchu, Taiwan (Yu-Chia Liu; Ming-Han Tsai; Weileun Fang)
Abstract	This study presents a simple approach to improve the performance of CMOS-MEMS capacitive accelerometer by means of the post-CMOS metal electroplating process. The metal layer can be selectively electroplated on the MEMS structures at low temperature; and the thickness of metal layer can be easily adjusted by process. Thus, the performance of capacitive accelerometer (i.e., structure deformation, sensitivity) can be improved significantly. In application, the designed accelerometers have been implemented using (1) standard TSMC CMOS 0.35µm 2P4M process, (2) Ti/Au seed-layer deposition/patterning by Asia Pacific Microsystems Inc. (apm), MEMS foundry, and (3) in-house post-CMOS electroplating and releasing processes. Measurements indicate the sensitivity is improved for 2.5-fold, and noise is decreased near 2.5-fold after Ni electroplating. Moreover, unwanted structure deformation due to the temperature variation is significantly suppressed by electroplated Ni.
Starting Page	1002
Ending Page	1005
File Size	2124449
Page Count	4
File Format	PDF
ISBN	9781457701573
e-ISBN	9781457701566
DOI	10.1109/TRANSDUCERS.2011.5969153
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2011-06-05
Publisher Place	China
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Nickel Accelerometers Sensitivity CMOS integrated circuits Temperature measurement Micromechanical devices Frequency measurement Accelerometer CMOS-MEMS Electroplating
Content Type	Text
Resource Type	Article

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1	Ministry of Education (GoI), Department of Higher Education	Sanctioning Authority	https://www.education.gov.in/ict-initiatives
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4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
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