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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Nozawa, H. Takayama, M. Koyama, S. |
| Copyright Year | 2001 |
| Description | Author affiliation: Graduate Sch. of Energy Sci., Kyoto Univ., Japan (Nozawa, H.) |
| Abstract | Ferroelectric thin film, which is a kind of functional dielectric, especially provided with hysteresis characteristics in P-E curve, has drawn wide attention in the LSI field, because of its ideal features, like nonvolatility and fast programming operation at low voltage. From various points of view, for example, academic, industry and so on, basic studies have been drastically advanced for this decade. Recently, ferroelectric memory, called FeRAM, succeeds practically in volume production. At this stage, interestis in the theoretical prediction of life of the products and their application to logic devices. This paper has described a leading study on reliability physics and some applications of ferroelectric dielectric technology. Finally promising perspectives on the ferroelectric dielectric technology are shown. |
| Sponsorship | Chinese Inst. Electron. |
| Starting Page | 687 |
| Ending Page | 691 |
| File Size | 396563 |
| Page Count | 5 |
| File Format | |
| ISBN | 0780365208 |
| DOI | 10.1109/ICSICT.2001.981597 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2001-10-22 |
| Publisher Place | China |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Ferroelectric materials Dielectric thin films Hysteresis Large scale integration Functional programming Low voltage Random access memory Ferroelectric films Nonvolatile memory Production |
| Content Type | Text |
| Resource Type | Article |
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