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Content Provider | IEEE Xplore Digital Library |
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Author | Ledger, A.M. Clapis, P.J. |
Copyright Year | 1993 |
Description | Author affiliation: Hughes Danbury Optical Syst. Inc., Danbury, CT, USA (Ledger, A.M.; Clapis, P.J.) |
Abstract | An instrument for rapidly generating a thickness map of the silicon overlayer in SOI wafers has recently been developed. This instrument can view entire wafers up to 200 mm in diameter by using a high-resolution wide-field optical system and CCD camera. The output from the camera comprises a set of digitized multispectral images of the SOI wafer; these images are used to generate reflectance maps of the bonded wafer at a discrete number of wavelengths and are then used to compute the silicon thickness over the entire wafer by comparing measured spectral patterns with a pre-computed library. Pattern matching algorithms are used in conjunction with a parallel processor, yielding measurement speeds orders of magnitude faster than conventional instruments (e.g. one minute for a 64/spl times/64 array of locations). The technique simultaneously measures the buried oxide thickness, an important capability in SOI wafer fabrication. Measurement accuracy is better than /spl plusmn/2 nm with excellent repeatability. |
Starting Page | 64 |
Ending Page | 65 |
File Size | 163652 |
Page Count | 2 |
File Format | |
ISBN | 0780313461 |
DOI | 10.1109/SOI.1993.344590 |
Language | English |
Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
Publisher Date | 1993-10-05 |
Publisher Place | USA |
Access Restriction | Subscribed |
Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
Subject Keyword | Instruments Optical films Silicon Thickness measurement Wavelength measurement High speed optical techniques Charge coupled devices Charge-coupled image sensors Cameras Multispectral imaging |
Content Type | Text |
Resource Type | Article |
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