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Content Provider | IEEE Xplore Digital Library |
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Author | Kawabata, K. Tanizawa, M. Ishikawa, K. Inoue, Y. |
Copyright Year | 2008 |
Description | Author affiliation: Renesas Technol. Corp., Itami (Kawabata, K.; Tanizawa, M.; Ishikawa, K.; Inoue, Y.) |
Abstract | STT MRAM is one of the most promising candidates for the next generation non-volatile memory. The STT-MRAM write operation is to switch the magnetization direction of ferromagnetic free layer with spin transfer torque by current injection. A ferromagnetic thin film used in it is so small volume that the thermal fluctuation due to ambient temperature has to be considered in the device design. Its process is described by a stochastic probability distribution. In this paper, a write error probability function in STT MRAM at finite temperature is investigated based on the result of LLG micro magnetic simulation. The function is found to be a Weibull type function with modulus, beta. The physical meanings of beta is found to be an index of competitions between thermal activation process and spin transfer torque ones in switching of STT MRAM at finite temperature. |
Starting Page | 53 |
Ending Page | 56 |
File Size | 936952 |
Page Count | 4 |
File Format | |
ISBN | 9781424417537 |
DOI | 10.1109/SISPAD.2008.4648235 |
Language | English |
Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
Publisher Date | 2008-09-09 |
Publisher Place | Japan |
Access Restriction | Subscribed |
Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
Subject Keyword | Switches Torque Magnetization Magnetic tunneling Error probability Fitting Mathematical model finite temperature switching process spin transfer torque MRAM |
Content Type | Text |
Resource Type | Article |
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