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Content Provider | IEEE Xplore Digital Library |
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Author | Chengbin Ma Yoshida, K. Honda, K. |
Copyright Year | 2015 |
Description | Author affiliation: Takasago Ltd., Kawasaki, Japan (Yoshida, K.; Honda, K.) || Univ. of Michigan-Shanghai Jiao Tong Univ. Joint Inst., Shanghai Jiao Tong Univ., Shanghai, China (Chengbin Ma) |
Abstract | This report discusses using the new SiC-MOSFETs in a front-end DC-DC converter for distributed power systems. In such an application, high efficiency and high power density are the major driving factors that naturally require a high switching frequency. The SiC-MOSFET is widely considered a desirable switching device for the high-frequency power conversion/inversion circuits due to its high voltage, low on-resistance, and fast switching speed. Here a 700-V 40-kW isolated bidirectional resonant LLC DC-DC converter is designed and fabricated using both the conventional Si-IGBTs and SiC-MOSFETs. The experimental results show the DC-DC converter using SiC-MOSFETs can reach a system efficiency around 98%, about 2% higher than that of the DC-DC converter using the conventional Si-IGBTs at rated power. It is also found that high-power and high-frequency transfer such as working at 100 kHz is now not commercially available. The optimized design and fabrication of the high-frequency transformer is crucial to promote the application of SiC-MOSFETs in high-power isolated DC-DC converters. Besides, accurate modeling of the SiC-MOSFET, high-precision simulation of the converter, and cost-performance evaluation/prediction are also important. |
Starting Page | 894 |
Ending Page | 899 |
File Size | 376631 |
Page Count | 6 |
File Format | |
ISBN | 9784907764487 |
DOI | 10.1109/SICE.2015.7285440 |
Language | English |
Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
Publisher Date | 2015-07-28 |
Publisher Place | China |
Access Restriction | Subscribed |
Rights Holder | The Society of Instrument and Control Engineers - SICE |
Subject Keyword | DC-DC power converters Capacitors Power systems Resonant frequency Switches Inductance Multichip modules Si-IGBT Isolated bidirectional DC-DC converter distributed power system high switching frequency SiC-MOSFET |
Content Type | Text |
Resource Type | Article |
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