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Content Provider | IEEE Xplore Digital Library |
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Author | Kyu Heon Cho Young Hwan Choi Jiyong Lim Young Shil Kim In Hwan Ji Min Koo Han |
Copyright Year | 2008 |
Description | Author affiliation: Sch. of Electr. Eng., Seoul Nat. Univ., Seoul (Kyu Heon Cho; Young Hwan Choi; Jiyong Lim; Young Shil Kim; In Hwan Ji; Min Koo Han) |
Abstract | We proposed channel modulated AlGaN/GaN high electron mobility transistors (HEMTs) employing fluoride plasma treatment and carried out the detailed numerical simulation of device operation using ISE-TCAD. The reduction of peak electric field is required to achieve the high breakdown voltage of AlGaN/GaN HEMTs. Proposed channel modulated AlGaN/GaN HEMTs created the fluoride plasma treated region between the gate and the drain. The fluoride plasma treated region modulated the two-dimensional electron gas (2-DEG) channel concentration, and effectively reduced the peak electric field without any field plates. The reduction of peak electric field in the gate-to-drain region made the breakdown voltage increased by 206 %. DC characteristics of channel modulated AlGaN/GaN HEMTs remained practically the same as those of the conventional AlGaN/GaN HEMTs. The breakdown voltage could be increased without a significant degradation of DC characteristics due to the $SiO_{2}$ passivation layer. The deposition of $SiO_{2}$ passivation layer combining with fluoride plasma treatment is a powerful process for channel modulated AlGaN/GaN HEMTs. |
Starting Page | 2172 |
Ending Page | 2176 |
File Size | 727297 |
Page Count | 5 |
File Format | |
ISBN | 9781424416677 |
ISSN | 02759306 |
DOI | 10.1109/PESC.2008.4592264 |
Language | English |
Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
Publisher Date | 2008-06-15 |
Publisher Place | Greece |
Access Restriction | Subscribed |
Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
Subject Keyword | Aluminum gallium nitride Gallium nitride HEMTs MODFETs Plasmas Electric fields Logic gates |
Content Type | Text |
Resource Type | Article |
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