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Content Provider | IEEE Xplore Digital Library |
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Author | Meng-Lin Hsia Zhe Ming Liu Chieh Ning Chan Chen, O.T.-C. |
Copyright Year | 2011 |
Description | Author affiliation: Dept. of Electrical Engineering, National Chung Cheng University, Chia-Yi, 621, Taiwan (Meng-Lin Hsia; Zhe Ming Liu; Chieh Ning Chan; Chen, O.T.-C.) |
Abstract | This work explores crosstalk effects of avalanche CMOS photodiodes in a 3D sensor array where photodiodes were implemented under different shapes, perimeters, areas, structures and array sizes using the TSMC 0.35µm technology. The breakdown voltages are increased with areas and depths of p-n junctions, and decreased as perimeters of p-n junctions and array sizes increasing. The preferred shape of a photodiode tends to be a circle. Particularly, the breakdown voltage of an avalanche CMOS photodiode with the crosstalk effect is derived based on its physical characteristics. The proposed mathematical model can be beneficial to the design of avalanche CMOS photodiodes in a sensor array. |
Starting Page | 1689 |
Ending Page | 1692 |
File Size | 876400 |
Page Count | 4 |
File Format | |
ISBN | 9781424492909 |
ISSN | 19300395 |
e-ISBN | 9781424492893 |
DOI | 10.1109/ICSENS.2011.6127267 |
Language | English |
Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
Publisher Date | 2011-10-28 |
Publisher Place | Ireland |
Access Restriction | Subscribed |
Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
Subject Keyword | Arrays CMOS integrated circuits Crosstalk Avalanche photodiodes CMOS technology Photonics breakdown voltage Avalanche photodiode crosstalk effect CMOS photodiode |
Content Type | Text |
Resource Type | Article |
Subject | Electrical and Electronic Engineering |
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